Integrated circuit with metal path for reducing parasitic effects

• US 4,219,827 A
• Filed: 01/15/1979
• Issued: 08/26/1980
• Est. Priority Date: 01/31/1976
• Status: Expired due to Term

• Current Assignee: Telefunken Electronic GmbH (Continental AG)
• Original Assignee: Licentia Patent-Verwaltungs-GmbH (AB Electrolux)
• Inventors: Kaiser, Reinhold
• Primary Examiner(s): James, Andrew J.
• Application Number:
  US06/003,645
• Time in Patent Office: 589 Days
• Field of Search: 357/52, 357/53, 357/65, 357/67, 357/68, 357/70
• US Class Current: 257/779
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 23/482 consisting of lead-in layers inseparably applied to the semiconductor body electrodes H01L29/40
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An integrated circuit comprises a semiconductor body with a metal path running at least partially on the component side surface of the semiconductor body itself.

The invention also includes the method of making the arrangement.

Claims

1. In an integrated circuit arrangement including a semiconductor body having a plurality of electrically separated components formed therein adjacent one main surface and an insulating layer on said one main surface and covering said components except for openings for connections to same while leaving a part of said one main surface exposed, the improvement comprising:

a metal path disposed on said one main surface with at least a portion of said metal path running directly on said exposed part of said one main surface of said semiconductor body and with said portion being longer than any portion of said metal path which runs exclusively on the surface of said insulating layer.

2. An integrated circuit as defined in claim 1 wherein said exposed part of said one main surface is adjacent the edge of said insulating layer, and said metal path runs along the edge of said one main surface of the semiconductor body.

3. An integrated circuit as defined in claim 1, wherein said metal path runs only on said one main surface of said semiconductor body over its entire length.

4. An integrated circuit as defined in claim 1, wherein said metal path runs along the edge of said one main surface of the semiconductor body.

5. An integrated circuit as defined in claim 1, wherein metal paths run along one, two, three or four lateral edges of said one main surface of the semiconductor body.

6. An integrated circuit as defined in claim 1, wherein metal paths run along, two, three and four lateral edges of said one main surface of the semiconductor body.

7. An integrated circuit as defined in claim 5, wherein said metal paths which run along the lateral edges of said semiconductor body are connected together to form a single metal path.

8. An integrated circuit as defined in claim 7, wherein said single metal path is right-angled.

9. An integrated circuit as defined in claim 7, wherein said single metal path is U-shaped.

10. An integrated circuit as defined in claim 7, wherein said single metal path is frame-like.

11. An integrated circuit as defined in claim 1, wherein said metal path runs in a recess which is provided in said insulating layer for enabling scribing of the semiconductor wafer.

12. An integrated circuit as defined in claim 1, wherein said metal path runs partially on said insulating layer present on said semiconductor body.

13. An integrated circuit arrangement as defined in claim 12, wherein said metal path runs on said insulating layer with one part and along the semiconductor body with another part.

14. An integrated circuit as defined in claim 1 and comprising conducting paths running to connecting points inside said one main surface from said metal path provided at an edge or edges of said one main surface.

15. An integrated circuit as defined in claim 14, wherein said conducting paths run on said insulating layer present on said semiconductor body.

16. An integrated circuit as defined in claim 1, wherein said semiconductor body comprises silicon and said metal path comprises aluminium.

17. An integrated circuit as defined in claim 1, wherein said metal path is connected to a potential.

18. An integrated circuit as defined in claim 1, wherein said metal path is connected to a reference potential.

19. An integrated circuit as defined in claim 1 and comprising a broadened-out connecting spot for said metal path in the form of a metal pad.

20. An integrated circuit as defined in claim 1 and comprising a wire connecting said metal path and a potential.

21. A method of producing an integrated circuit as defined in claim 1 and comprising producing recesses in an insulating layer on a semiconductor wafer from which said semiconductor body is to be separated thereafter introducing metal for said metal path at least into said recess;

and then scribing said semiconductor wafer.

22. A method as defined in claim 21 and comprising separating said metal path by a separating trace which exposes the semiconductor surface for the purpose of scribing.

23. A method as defined in claim 21, wherein scribing takes place by means of a laser beam.

24. A method as defined in claim 21 and comprising alloying the metal of said metal path to the semiconductor body by means of laser treatment.

25. In an integrated circuit arrangement including a semiconductor body having a plurality of separated components formed therein adjacent one main surface and on insulating layer on said one main surface and covering said components, the improvement wherein means are provided for reducing parasitic effects and for improving the electrical separation between said components, said means consisting of:

a metal path disposed on said one main surface with at least a portion of said metal path running on said one main surface of said semiconductor body in direct contact with same and with said portion being longer than any portion of said metal path which runs exclusively on the surface of said insulating layer.