Semiconductor solar cell

• US 4,219,830 A
• Filed: 06/19/1978
• Issued: 08/26/1980
• Est. Priority Date: 06/19/1978
• Status: Expired due to Term

• Current Assignee: SERA Solar Corporation
• Original Assignee: James F. Gibbons
• Inventors: Gibbons, James F.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/916,833
• Time in Patent Office: 799 Days
• Field of Search: 357/30, 357/20, 357/88, 357/89
• US Class Current: 136/255
• CPC Class Codes: H01L 31/04 adapted as photovoltaic [PV] conversion devices testing thereof during manufacture H01L22/00; testing thereof after manufacture H02S50/10
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

There is described a semiconductor solar cell of improved efficiency. The cell has a built-in electric field which extends from the surface of the cell to the interior to keep minority carriers away from the surface whereby recombination at the surface is reduced. Interior contacts are provided whereby current flow along the surface of the device to contacts is avoided to reduce surface resistance and recombination.

Claims

1. A solar cell formed of a body of semiconductor material of one conductivity type including an active region where carriers are generated by solar energy which impinges into and penetrates the cell, said active region having a graded impurity concentration extending at least from the surface where the solar energy impinges towards the center of said body whereby to transport generated minority carriers from the surface towards the center of the body, a plurality of spaced regions of opposite conductivity type having a high impurity concentration extending into the body to form an interior p-n collecting junction which collects the minority carriers transported toward the center of the body by the electric field and provides a low resistance path to the surface, and means of forming ohmic contact to said spaced regions of opposite conductivity type and to said body of one conductivity type.

2. A solar cell as in claim 1 wherein the spacing of said spaced regions of opposite conductivity type is such that substantially all minority carriers are collected by said p-n junction before they can recombine.

3. A solar cell as in claim 1 in which said graded impurity concentration extends from all surfaces toward the center of the body to transport minority carriers generated in the body toward the p-n collecting junction.

4. A solar cell as in claim 2 in which said spaced regions of opposite conductivity type extend inwardly from said surface toward the center.

5. A solar cell as in claim 1 in which said cell includes sides and said regions of opposite conductivity type extend inwardly from at least one side of said cell.

6. A solar cell as in claim 5 wherein said regions of opposite conductivity type are in the form of a grid.

7. A solar cell as in claim 5 in which said regions of opposite type are spaced such that substantially all minority carriers are collected at said p-n junction before they recombine.