Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier
First Claim
1. A Josephson tunnel junction device comprisingfirst and second layers of superconductive material superposed with respect to each other,at least said first layer comprising a refractory compound superconductive material, anda barrier layer superposed between said first and second superconductive layers whereby Josephson tunnelling current can flow therethrough between said superconductive layers,said barrier layer comprised of polycrystalline semiconductor material selected from the group consisting of silicon, germanium and alloys thereof.
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Abstract
A Josephson tunnel junction device having niobium nitride superconductive electrodes includes a polycrystalline semiconductor tunnelling barrier therebetween comprised of silicon, germanium or an alloy thereof preferably deposited on the lower superconductive electrodes by chemical vapor deposition. The barrier height of the junction is precisely controlled by precision doping of the semiconductor material.
43 Citations
27 Claims
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1. A Josephson tunnel junction device comprising
first and second layers of superconductive material superposed with respect to each other, at least said first layer comprising a refractory compound superconductive material, and a barrier layer superposed between said first and second superconductive layers whereby Josephson tunnelling current can flow therethrough between said superconductive layers, said barrier layer comprised of polycrystalline semiconductor material selected from the group consisting of silicon, germanium and alloys thereof.
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18. A Josephson tunnel junction device for use as a switch in superconductive circuits comprising:
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a superconductive ground plane, a dielectric layer deposited on said ground plane, a first layer of refractory compound superconductive material deposited on said dielectric layer, a first insulator layer deposited on said first superconductive layer with at least one opening therethrough for defining a Josephson tunnelling barrier area, a barrier layer of polycrystalline semiconductor material deposited on said first insulator layer and into said opening, said semiconductor material selected from the group consisting of silicon, germanium and alloys thereof, a second layer of superconductive material deposited on said layer of semiconductor material, said semiconductor material deposited in said opening forming a Josephson tunnelling barrier between said first and second superconductive layers whereby Josephson tunnelling current can flow therethrough between said superconductive layers, a second insulator layer deposited on said second superconductive layer, and superconductive control line means deposited on said second insulator layer for providing a control magnetic field to said barrier thereby controlling the Josephson tunnelling current flowing between said superconductive layers through said barrier. - View Dependent Claims (19, 20, 21, 22, 23, 25)
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Specification