Media compatible pressure transducer

• US 4,222,277 A
• Filed: 08/13/1979
• Issued: 09/16/1980
• Est. Priority Date: 08/13/1979
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Mallon, Joseph R.
• Primary Examiner(s): Woodiel, Donald O.
• Application Number:
  US06/065,886
• Time in Patent Office: 400 Days
• Field of Search: 73/721, 73/727, 73/777, 338/4, 338/42
• US Class Current: 73/721
• CPC Class Codes: G01L 15/00 Devices or apparatus for measuring two or more fluid pressure values simultaneously
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

There is disclosed an absolute pressure transducer which is adaptable for use in various deleterious mediums. A single wafer contains a gage sensor configuration on one portion and an absolute sensor configuration on another adjacent portion. An active diaphragm area is defined for each sensor configuration by forming a depression beneath the sensor locations. A base member is bonded or secured to the wafer at the side containing the depressions. An aperture is directed through the base member to communicate with the depression associated with the gage sensor configuration and is employed as an external pressure port. The top surface of the wafer which contains the sensors is exposed to a relatively clean source of pressure to thereby enable the absolute sensor section to monitor this pressure, while the gage sensor section responds to both pressures.

Claims

1. An absolute pressure transducer, comprising:

(a) a wafer of a semiconductor material having located on a bottom surface thereof, first and second recesses defining first and second active diaphragm areas,

(b) a first sensor means located on a top surface of said wafer above and within said first active area as defined by said first recess, and second sensor means located on said top surface of said wafer above and within said second active area as defined by said second recess,

(c) means adapted to apply a first pressure to said top surface of said wafer to cause said first and second sensor means to respond thereto,

(d) means adapted to apply a second pressure to said second recess to cause only said second sensor means to respond thereto, and

(e) means coupling said first and second sensor means in a bridge configuration to provide an output indicative of said second pressure applied to said recess as referenced to said first pressure.

2. The transducer according to claim 1, further comprising:

(a) a base plate secured to said bottom surface of said wafer to cover said first and second recesses, said plate having an aperture located therein and communicating with said second recess for application thereto of said second pressure.

3. The transducer according to claim 2 wherein said base plate is fabricated from glass and bonded to said wafer by a diffusion bond.

4. The transducer according to claim 2 wherein said base plate is fabricated from a semiconductor material.

5. The transducer according to claim 1 wherein said wafer is fabricated from silicon.

6. The transducer according to claim 1 wherein said first and second sensor means each comprise a first peripheral piezoresistive device located in said top surface near the edge of said associated recess and a second piezoresistive device located relatively centrally with respect to said recess.

7. The transducer according to claim 1 further comprising:

a housing having an internal hollow for accommodating said wafer with a surface of said housing having a first aperture therein communicating with said top surface of said wafer and with another surface of said housing having a second aperture communicating solely with said second recess.

8. The transducer according to claim 7 further including means coupled to said first aperture adapted to apply a reference pressure thereto derived from a relatively clean environment, and means coupled to said second aperture adapted to apply another pressure thereto derived from a relatively deleterious environment.

9. The transducer according to claim 1 wherein said wafer is fabricated from silicon and is relatively rectangular in configuration.

11. The pressure transducer according to claim 9 further including a housing having an internal hollow with said wafer positioned within said hollow, said housing having a first aperture in a surface thereof communicating with said top surface of said wafer, and a second aperture in a surface thereof communicating with said second recess and means coupled to said first and second apertures adapted to respectively apply said reference and said another pressure thereto.

12. The transducer according to claim 9 wherein said wafer is rectangular in shape and fabricated from silicon.

13. The transducer according to claim 11 wherein said base plate is rectangular in shape and relatively congruent with said wafer, and fabricated from glass and bonded to said wafer by means of a diffusion bond.

14. The transducer according to claim 11 wherein said base plate is fabricated from silicon.

16. The transducer according to claim 9 wherein said circuit arrangement is a Wheatstone bridge configuration with one arm of said bridge comprising a first terminal having connected thereto, a terminal of said peripheral sensor of said first circuit arrangement in series with said central sensor between a second terminal, and said other arm comprising a terminal of said peripheral sensor of said second circuit arrangement connected to said first terminal in series with said associated sensor between said second terminal.

10. An absolute pressure transducer, comprising:

(a) a wafer of a semiconductor material having a top and bottom surface with relatively thin side surfaces, said bottom surface having first and second circular recesses adjacent one another and relatively of the same diameter manifesting a first and second diaphragm area,

(b) a base plate secured to said bottom surface to cover said recesses with said base plate having an aperture communicating solely with said second circular recess,

(c) a first piezoresistive circuit arrangement mounted on said top surface of said wafer above said first depression with a peripheral sensor located near an edge of said recess and a central sensor located near the center of said recess,

(d) a second piezoresistive circuit arrangement mounted on said top surface of said wafer above said second recess with a peripheral sensor located near an edge of said recess and a central sensor located near the center of said recess,

(e) means for applying a reference pressure to said top surface of said wafer,

(f) means for applying another pressure to said aperture in said base plate for directing the same solely to said second recess, and

(g) means coupling said piezoresistive sensors in a circuit arrangement to cause said circuit to provide an output indicative of said another pressure as referenced to said reference pressure.

15. The transducer according to claim 10 wherein said reference pressure is atmospheric pressure derived from a relatively clean environment, with said another pressure being a pressure to be measured with respect to said reference pressure and derived from a relatively deleterious atmosphere.

17. The transducer according to claim 10 wherein said base plate is fabricated from glass.