Tungsten niobate electrochromic device

• US 4,225,216 A
• Filed: 02/21/1979
• Issued: 09/30/1980
• Est. Priority Date: 02/21/1979
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Inventors: Phillips, James C., Boyd, Gary D., Spencer, Edward G., Lemons, Ross A., Remeika, Joseph P.
• Primary Examiner(s): Gron, Teddy S.
• Application Number:
  US06/013,385
• Time in Patent Office: 587 Days
• Field of Search: 350/357, 252/408, 252/300, 252/518, 252/514
• US Class Current: 359/273
• CPC Class Codes: G02F 1/1524 Transition metal compounds

Abstract

Disclosed is an electro-optical device in which color changes are electrically induced in an electrochromic material which is a single or polycrystalline niobium tungstate represented approximately by the formula W₉ Nb₈ O₄₇. The device comprises an ion source and a source of an electrical field which may be reversible so as to produce coloring and bleaching of the electrochromic material. Due to high corrosion resistance of such material, the ion source may conveniently be a hydrous electrolyte.

Claims

1. An electro-optical device comprising an electrochromic material, an electrolyte ion source in contact with at least a portion of a surface of said material, and means for producing an electric field across said portion to induce color change in said electrochromic material CHARACTERIZED IN THAT said material consists essentially of a single or polycrystalline tungsten niobate represented by the formula (9WO₃)_1+X (4Nb₂ O₅)_1-X where X is a number in the range of -0.02 to +0.02.

2. The device of claim 1 in which said material forms a substrate-supported layer.

3. The device of claim 1 in which said ion source is a hydrous electrolyte.

4. The device of claim 2 in which said material has been deposited on a substrate by sputtering while said substrate was at a temperature in the range of 600-800 degrees C.

5. The device of claim 2 in which said material has been deposited on a substrate by sputtering or ion beam deposition followed by heating at a temperature in the range of 600-800 degrees C.

6. The device of claim 1 in which reactive impurities are present in said material in a combined amount of less than 1 weight percent.

7. The device of claim 1 in which said material is interspersed with at least one nonreactive additive.

8. The device of claim 7 in which said additive is elemental gold in an amount not exceeding 25 atomic percent.