Thin metal-halogen cells

• US 4,226,924 A
• Filed: 11/20/1978
• Issued: 10/07/1980
• Est. Priority Date: 11/22/1977
• Status: Expired due to Term

• Current Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
• Original Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
• Inventors: Kobayashi, Hidehiko, Ozaki, Masaru, Arakawa, Tatsumi, Kimura, Muneaki
• Primary Examiner(s): LeFevour, Charles F.
• Application Number:
  US05/962,359
• Time in Patent Office: 687 Days
• Field of Search: 429/191, 429/218, 429/219, 429/220, 429/126
• US Class Current: 429/126
• CPC Class Codes: H01M 4/60 of organic compounds
• CPC Class Codes: H01M 6/182 with halogenide as solid electrolyte
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A thin metal-halogen cell which comprises an electroconductive substrate, an anode active material layer of thin metal film formed on the base plate, a solid electrolyte layer formed on the anode active material, a cathode active material layer comprising a halogen, adhesive and carbonaceous powder, and an electroconductive plastic film, the latter two being laminated on the solid electrolyte layer in this order can be produced by using a step of forming thin films such as vacuum evaporation coating or sputtering and a step of laminating by using an adhesive. Thus, ultra-thin cells having high power and a thickness of 1 mm or less can be produced easily and inexpensively. When a separator and a barrier layer are sandwiched between the cathode active material layer and the solid electrolyte layer, shelf life of the cell is improved remarkably.

Claims

1. A thin metal-halogen cell which comprises an electroconductive substrate about 50 microns to 0.5 mm in thickness, a metal film anode active material layer of about 1 to 100 microns formed on the substrate, a solid electrolyte layer of about 1 to 20 microns formed on the anode active material, a cathode active material layer of about 50 microns to 0.5 mm thickness and comprising a halogen, an adhesive and carbonaceous powder, and an electroconductive plastic film about 50 microns to 0.5 mm thick, the cathode active material layer and the electroconductive plastic film being laminated on the solid electrolytic layer in this order.

2. A thin metal-halogen cell according to claim 1, wherein the thickness of the cell is at most about 1 mm.

3. A thin metal-halogen cell according to claim 1, wherein the adhesive used in the cathode active material layer is a polymeric adhesive.

4. A thin metal-halogen cell according to claim 3, wherein the polymeric adhesive is a member selected from the group consisting of quaternary ammonium salt electroconductive polymers, polyvinyl chloride, polyvinyl acetate, polyacrylonitrile, cellulose resins and rubber resins.

5. A thin metal-halogen cell according to claim 1, 2 or 3, wherein the anode active material layer is a silver layer.

6. A thin metal-halogen cell according to claim 1, 2 or 3, wherein the anode active material layer is a layer of tin, aluminum or copper.

7. A thin metal-halogen cell according to claim 1, 5 or 6, which further contains an organic polymer separator about 20 to 500 microns thick between the cathode active material layer and the solid electrolyte layer.

8. A thin metal-halogen cell according to claim 7, wherein the separator is a member selected from the group consisting of a porous polyethylene, a porous polysulfone, a porous polyacrylonitrile, a cellophane, and an unwoven fabric.

9. A thin metal-halogen cell according to claim 1, 5 or 6, which further contains a separator about 20 to 500 microns thick and a barrier layer about 0.01 to 1000 microns thick between the cathode active material layer and the solid electrolyte layer.

10. A thin metal-halogen cell according to claim 9, wherein the barrier layer contains at least one organic compound selected from the group consisting of aromatic N-heterocyclic compounds, tertiary amines, and cyclic ethers.

11. A thin metal-halogen cell according to claim 9, wherein the barrier layer contains at least one alkali metal salt or alkaline earth metal salt of selenic acid, vanadic acid, ortho-vanadic acid, tungstic acid, telluric acid or stannic acid.

12. A thin metal-halogen cell according to claim 9, wherein the barrier layer contains at least one metal halide in which the metal has a larger ionization tendency than that in the anode active material.

13. A thin metal-halogen cell according to claim 9, wherein the barrier layer is made from a mixture of a barrier and an adhesive and has a thickness of from 0.01μ

to 1000μ

.