Methods of making composite conductive structures in integrated circuits

• US 4,227,944 A
• Filed: 06/11/1979
• Issued: 10/14/1980
• Est. Priority Date: 06/11/1979
• Status: Expired due to Term

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Gibbons, James F., McConnelee, Paul A., Brown, Dale M., Chow, Tat-Sing P.
• Primary Examiner(s): Kendall, Ralph S.
• Application Number:
  US06/047,888
• Time in Patent Office: 491 Days
• Field of Search: 427/93, 427/88, 427/91, 29/589, 29/590, 357/67, 357/71, 148/6
• US Class Current: 438/655
• CPC Class Codes: H01L 21/28105 the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step
• CPC Class Codes: H01L 21/32105 Oxidation of silicon-containing layers
• CPC Class Codes: H01L 21/76889 by forming silicides of refractory metals
• CPC Class Codes: H01L 23/53257 the principal metal being a refractory metal
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 148/103 Mask, dual function, e.g. diffusion and oxidation
• CPC Class Codes: Y10S 148/141 Self-alignment coat gate
• CPC Class Codes: Y10S 148/147 Silicides

Abstract

A method of making a composite conductive structure is described. The structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide covered by a layer of a silicide of the refractory metal and a layer of silicon dioxide. The method includes depositing a layer of polycrystalline silicon over the conductor and the insulating substrate, reacting the layer of polycrystalline silicon with the conductor to form a refractory metal silicide, removing the unreacted portion of the layer of polycrystalline silicon, and then oxidizing the exposed surface of the refractory metal silicide into a layer of silicon dioxide.

Claims

1. A method of forming a composite structure comprising

providing a substrate of semiconductor material having an overlying layer of insulating material,

forming a conductor of a refractory metal which is substantially nonreactive with silicon dioxide in a desired pattern overlying said layer of insulating material,

forming over said conductor of metallic material and said layer of insulating material a layer of polycrystalline silicon,

heating said substrate including said conductor of metallic material and said overlying layer of polycrystalline silicon to a temperature and for a time to cause said layer of polycrystalline silicon to react with a portion of said conductor to form a layer of a silicide of said metallic material overlying a remaining portion of said conductor unconverted to a silicide thereof,

removing the portion of said layer of polycrystalline silicon which has not reacted with said metallic material,

heating said substrate including said conductor and said layer of said metal silicide in an oxidizing atmosphere at a temperature and for a time to cause said oxidizing atmosphere to react with said layer of said silicide to convert a portion thereof to silicon dioxide overlying another portion of said layer of said silicide unconverted to silicon dioxide.

2. The method of claim 1 in which said refractory metal is selected from the class consisting of molybdenum, tungsten, tantalum, platinum and palladium.

3. The method of claim 2 in which said metallic material is molybdenum.

4. The method of claim 2 in which said metallic material is tungsten.

5. The method of claim 2 in which said metallic material is tantalum.

6. The method of claim 2 in which said metallic material is platinum.

7. The method of claim 2 in which said metallic material is palladium.

8. The method of claim 1 in which the unreacted portion of said layer of polycrystalline silicon is removed by etching with an etchant which etches polycrystalline silicon substantially faster than said silicide of said metallic material.

9. The method of claim 8 in which said etchant is an aqueous solution of potassium hydroxide.

10. The method of claim 1 in which said layer of polycrystalline silicon is provided by chemical vapor deposition of silicon.

11. The method of claim 1 in which the temperature to which said substrate is heated to cause said layer of polycrystalline silicon to react with said conductor is above 1000°

C.

12. The method of claim 1 in which said substrate is heated at a temperature and for a time to convert substantially all of said layer of said silicide to silicon dioxide.

13. The method of claim 1 in which said insulating material is silicon dioxide.

14. The method of claim 1 in which said layer of insulating material is constituted of a layer of silicon nitride overlying a layer of silicon dioxide, said conductor overlying said layer of silicon nitride.

15. The method of claim 1 in which said insulating material is a composite of silicon dioxide and silicon nitride.

16. The method of claim 1 in which said semiconductor material is silicon.