Etchant for silicon dioxide films disposed atop silicon or metallic silicides
First Claim
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1. In a process for selectively etching a silicon oxide layer which is disposed atop a metallic silicide layer and wherein exposed silicon may be present below or adjacent to said silicide, the step of contacting said oxide layer with an etchant comprising:
- hydrogen fluoride in polyhydric alcohol, the solution being substantially free of unbound water and ammonium fluoride;
said etchant not substantially attacking either said silicide layer or said silicon.
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Abstract
An etchant comprising a solution of hydrogen fluoride dissolved in an organic solvent such as glycerine. The solution is substantially free of unbound water and ammonium fluoride. The etchant is particularly suitable for removing silicon dioxide disposed atop a metallic silicide formed in a silicon semiconductor where the silicon may be exposed.
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Citations
7 Claims
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1. In a process for selectively etching a silicon oxide layer which is disposed atop a metallic silicide layer and wherein exposed silicon may be present below or adjacent to said silicide, the step of contacting said oxide layer with an etchant comprising:
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hydrogen fluoride in polyhydric alcohol, the solution being substantially free of unbound water and ammonium fluoride; said etchant not substantially attacking either said silicide layer or said silicon. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification