Elastic surface wave device

• US 4,233,530 A
• Filed: 10/05/1978
• Issued: 11/11/1980
• Est. Priority Date: 10/05/1978
• Status: Expired due to Term

• Current Assignee: Clarion Co., Ltd. (Faurecia SA)
• Original Assignee: Clarion Co., Ltd. (Faurecia SA)
• Inventors: Minagawa, Shoichi, Mikoshiba, Nobuo
• Primary Examiner(s): Rolinec, Rudolph V.
• Assistant Examiner(s): Hostetter, Darwin R.
• Application Number:
  US05/948,826
• Time in Patent Office: 768 Days
• Field of Search: 330/5.5, 307/424, 333/150, 333/195, 331/107 A
• US Class Current: 307/424
• CPC Class Codes: H03F 13/00 Amplifiers using amplifying element consisting of two mechanically- or acoustically-coupled transducers, e.g. telephone-microphone amplifier
• CPC Class Codes: H03F 7/04 using variable-capacitance element; using variable-permittivity element

Abstract

An elastic surface wave device, especially amplifier which includes input and output means for electrical signals provided so as to be spaced on a surface of a piezoelectric material which composes a laminate in combination with a semiconductor, and an electrode provided in a surface signal wave propagation path between said input and output means for application of a d.c. bias voltage and supply of a pumping power.

Claims

1. An elastic surface wave device, comprising:

a laminate composed of a semiconductor layer, a piezoelectric material layer, and a protective film layer interposed therebetween;

a first electrode on a surface of said piezoelectric material layer;

a d.c. bias voltage source connected to said first electrode;

a pumping power source connected to said first electrode; and

a second electrode on a surface of said semiconductor layer for ohmic contact therewith.

2. An elastic surface wave device as set forth in claim 1, wherein said piezoelectric material layer has input and output means for electrical signals disposed spacedly on its surface and in the propagating path of elastic surface waves.

3. An elastic surface wave device as set forth in claim 1, wherein said piezoelectric material layer has at its one end a surface wave absorber disposed thereon.

4. An elastic surface wave device as set forth in claim 1, wherein said semiconductor layer is made of silicon and said piezoelectric layer is made of zinc oxide.