Strain insensitive integrated circuit resistor pair

• US 4,236,832 A
• Filed: 06/29/1978
• Issued: 12/02/1980
• Est. Priority Date: 06/29/1977
• Status: Expired due to Term

• Current Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
• Original Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
• Inventors: Takahashi, Satoshi, Suzuki, Kouji, Komatsu, Shigeru, Wakatsuki, Masao
• Primary Examiner(s): Larkins, William D.
• Application Number:
  US05/920,358
• Time in Patent Office: 887 Days
• Field of Search: 357/26, 357/51, 357/60
• US Class Current: 257/420
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/8605 Resistors with PN junctions
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

A semiconductor device includes first and second resistor regions having the same resistance and formed in a main surface of a silicon substrate to extend in a perpendicular direction. When the resistor regions have a p-conductivity type, said main surface is a {100} face, {511} face, {811} face or {911} face. When the resistor regions are of an n-conductivity type, said main surface is a {111} face.

Claims

1. A semiconductor integrated circuit device comprising:

a silicon semiconductor substrate of N-conductivity type having a least one main surface of a substantial (100), (511), (811), or (911) crystal face;

a P-conductivity type resistor unit formed in said main surface, said resistor unit including (1) a first P-conductivity type resistor extending in a first direction in said main surface and having a first end and a second end, and (2) a second P-conductivity type resistor extending in a second direction in said main surface perpendicular to said first direction and having a first end solely connected to said second end of said first P-conductivity type resistor and a second end, said first and second P-conductivity type resistors having the same resistance; and

a functional element formed in said main surface apart from said resistor unit and connected to said second end of said second P-conductivity type resistor.

2. The semiconductor device according to claim 1, wherein said first P-conductivity type resistor and said second P-conductivity type resistor are in contact for electrical connection.

3. The semiconductor device according to claim 1, wherein said first P-conductivity type resistor and said second P-conductivity type resistor are separately formed in said main surface of said N-conductivity type silicon substrate.

4. The semiconductor device according to claim 1, 2, or 3, further comprising a supporting plate on which said N-conductivity type silicon substrate is mounted, and a plastic resin molding in which said silicon substrate and said supporting plate are hermetically sealed.

5. The semiconductor device according to claim 4, wherein said first P-conductivity type resistor comprises a first plurality of separate resistor regions arranged in parallel, and said second P-conductivity type resistor comprises a second plurality of separate resistor regions arranged in parallel, said first plurality of separate resistor regions extending in a direction perpendicular to the direction of said second plurality of separate resistor regions.

6. A semiconductor integrated circuit device comprising:

a silicon semiconductor substrate of P-conductivity type having at least one main surface of a substantial (111) crystal face;

a N-conductivity type resistor unit formed in said main surface, said resistor unit including (1) a first N-conductivity type resistor extending in a first direction in said main surface and having a first end and a second end, and (2) a second N-conductivity type resistor extending in a second direction in said main surface perpendicular to said first direction and having a first end solely connected to said second end of said first N-conductivity type resistor and a second end, said first and second N-conductivity type resistors having the same resistance; and

a functional element formed in said main surface apart from said resistor unit and connected to said second end of said second N-conductivity type resistor.

7. The semiconductor device according to claim 6, wherein said first N-conductivity type resistor and said second N-conductivity type resistor are in contact for electrical connection.

8. The semiconductor device according to claim 6, wherein said first N-conductivity type resistor and said second N-conductivity type resistor are separately formed in said main surface of said silicon substrate.

9. The semiconductor device according to claim 6, 7, or 8, further comprising a supporting plate on which said P-conductivity type silicon substrate is mounted, and a plastic resin molding in which said P-conductivity type silicon substrate and said supporting plate are hermetically sealed.

10. The semiconductor device according to claim 9, wherein said first N-conductivity type resistor comprises a first plurality of separate resistor regions arranged in parallel, and said second N-conductivity type resistor comprises a second plurality of separate resistor regions arranged in parallel, said first plurality of separate resistor regions extending in a direction perpendicular to the direction of said second plurality of separate resistor regions.