Method for fabricating stacked semiconductor diodes for high power/low loss applications
First Claim
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1. A method for batch fabricating stacked semiconductor devices, wherein the stack consists of two diodes, comprising the steps of:
- (a) depositing a metallization layer on both planar surfaces of two appropriately doped semiconductor wafers;
(b) bonding one wafer to the second wafer such that they form a stacked, concentric configuration with complete surface contact;
(c) generating a plurality of electrode areas on both planar surfaces of the stacked wafer, such that the electrode areas on each surface are registered with each other;
(d) etching through the semiconductor material on both sides of the stacked wafer, using the electrode areas as an etch mask, such that the metallization layer at the center of the stack is exposed; and
,(e) separating the stacked wafer along the exposed center metallization boundaries, so as to create a plurality of stacked semiconductor devices.
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Abstract
A semiconductor wafer is appropriately doped to create a P-N or P-I-N junction, and metallized on both its planar surfaces with electrode material. The wafer is then bonded to a second similarly processed wafer. Without damaging the semiconductor material, the stacked wafer is processed so as to delineate a plurality of diodes on each side of the center metallization, such that the diodes on each side are registered with each other. The center metallization is then cut so as to yield a plurality of stacked semiconductor diodes.
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8 Claims
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1. A method for batch fabricating stacked semiconductor devices, wherein the stack consists of two diodes, comprising the steps of:
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(a) depositing a metallization layer on both planar surfaces of two appropriately doped semiconductor wafers; (b) bonding one wafer to the second wafer such that they form a stacked, concentric configuration with complete surface contact; (c) generating a plurality of electrode areas on both planar surfaces of the stacked wafer, such that the electrode areas on each surface are registered with each other; (d) etching through the semiconductor material on both sides of the stacked wafer, using the electrode areas as an etch mask, such that the metallization layer at the center of the stack is exposed; and
,(e) separating the stacked wafer along the exposed center metallization boundaries, so as to create a plurality of stacked semiconductor devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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