Monolithic Peltier temperature controlled junction

• US 4,238,759 A
• Filed: 10/20/1978
• Issued: 12/09/1980
• Est. Priority Date: 10/20/1978
• Status: Expired due to Term

• Current Assignee: University of Delaware
• Original Assignee: University of Delaware
• Inventors: Hunsperger, Robert G.
• Primary Examiner(s): James, Andrew J.
• Application Number:
  US05/953,006
• Time in Patent Office: 781 Days
• Field of Search: 357/28, 357/87
• US Class Current: 372/36
• CPC Class Codes: H01L 23/38 Cooling arrangements using the Peltier effect
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/645 the elements being electrically controlled, e.g. Peltier elements
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/02415 by using a thermo-electric cooler [TEC], e.g. Peltier element
• CPC Class Codes: H01S 5/0261 Non-optical elements, e.g. laser driver components, heaters H01S5/0265 takes precedence
• CPC Class Codes: H10N 10/817 the junction being non-separable, e.g. being cemented, sintered or soldered
• CPC Class Codes: H10N 10/854 comprising only metals H10N10/852, H10N10/853 take precedence

Abstract

A Peltier-cooled p-n junction in a monolithic solid-state electronic device embodying a substrate comprising a Peltier thermal surface layer disposed adjacent the active region of the p-n junction and in close proximity therewith, the Peltier thermal surface layer having an electrical conductor in circuit therewith affording an electrical path for the withdrawal or supply of Peltier effect current incident to the maintenance of the junction at a preselected temperature.

Claims

1. Means for maintaining the temperature of a p-n junction in a monolithic solid-state electronic device embodying a substrate comprising a Peltier thermal surface layer disposed adjacent the active region of said p-n junction and in close proximity therewith, said Peltier thermal surface layer being provided with an electrical conductor in circuit therewith through a first terminal affording an electrical path for the withdrawal or supply of Peltier effect current incident to the maintenance of said junction at a preselected temperature.

2. Apparatus according to claim 1 wherein a current source is interposed in circuit with said conductor via a switch effecting optional selective supply and direction of current flow through said monolithic solid-state electronic device.

3. Apparatus according to claim 1 utilized for cooling a p-n junction in a solid state electronic device wherein said Peltier thermal surface layer is employed for cooling said p-n junction by connection with a second Peltier thermal surface layer attached to said substrate.

4. Apparatus according to claim 3 wherein said p-n junction is of the lasing type.

5. Apparatus according to claim 1 wherein said Peltier thermal surface layer is one of the group consisting of Ag, Au-Ge, Au-Ge-Ni, and Au.

6. apparatus according to claim 3 wherein said Peltier thermal surface layers are substantially equal in area.

7. Apparatus according to claim 3 wherein said Peltier thermal surface layer is at least 5 microns thick.