Laser programmable read only memory

• US 4,238,839 A
• Filed: 04/19/1979
• Issued: 12/09/1980
• Est. Priority Date: 04/19/1979
• Status: Expired due to Term

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Redfern, Thomas P., Frederiksen, Thomas M., Connolly, Joseph J. Jr.
• Primary Examiner(s): Hecker, Stuart N.
• Application Number:
  US06/031,562
• Time in Patent Office: 600 Days
• Field of Search: 365/94, 365/96, 365/100, 365/104
• US Class Current: 365/96
• CPC Class Codes: G11C 17/12 using field-effect devices
• CPC Class Codes: G11C 17/16 using electrically-fusible links
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A read only memory is fabricated using metal oxide semiconductor technology and is intended for incorporation into large scale integrated circuits. A plurality of memory transistors is arrayed in a configuration having columns, each of which is associated with an address line, and rows, each of which is associated with a word line. A memory transistor is located at each intersection of an address line and a word line. Each memory transistor represents a bit location and includes a severable conductive link coupled in series and located on top of the field oxide surrounding the memory transistors. Each memory transistor in a particular column has its gate coupled to an address line. Each memory transistor in a particular row completes a series circuit which includes the severable conductive link between a first power supply terminal and a word line. Each word line includes a resistor coupled to the other power supply terminal. When a particular column is addressed, and the associated transistors in the address line turned on, all of the bits in the associated word will be "ones." The memory is programmed as desired after circuit manufacture in the wafer die sort operation by severing selected links with a laser beam. The severed device will program a "zero" into the bit location. The word lines are coupled to a decoder that employs an array of gates having input pairs, one of which displays hysteresis. The memory also includes an external program simulation circuit which permits externally generating a particular digital word to simulate the memory content prior to programming.

Claims

1. A laser programmable read only memory suitable for incorporation into a monolithic integrated circuit, said circuit including a plurality of transistors, each of which has a pair of controlled conduction electrodes and a control electrode, and a surrounding field oxide, said memory comprising:

a plurality of memory locations arranged in a configuration of columns and rows, each location comprising one of said transistors and severable link means coupled in series therewith;

word line means associated with each row of said configuration and coupled to each transistor in said row,

means connected to each word line means for electrically actuating said word line to a first logic state;

address line means associated with each column of said configuration, said address line means coupled to said control electrode of each of said transistors in said column, whereby when said address line is electrically operated to turn said transistors on, the transistor by way of said severable link means will actuate said word line means to a second logic state.

2. The memory of claim 1 wherein said severable link means is constructed to have an electrical resistance that is smaller than the electrical resistance of said means connected to each word line means.

3. The memory of claim 2 where said severable link means comprise a conductive metal film located on said field oxide of said integrated circuit whereby said film can be severed by traversing it with a laser beam.

4. The memory of claim 3 wherein said metal film is composed of a material selected from the group consisting of sichrome, molybdenum, tungsten, tantalum, nickel chromium alloy, niobium and tantalum nitride.

5. The memory of claim 4 wherein said metal film is composed of sichrome and said laser operates at a wavelength near one micron.