Gas fixation solar cell using gas diffusion semiconductor electrode

• US 4,240,882 A
• Filed: 11/08/1979
• Issued: 12/23/1980
• Est. Priority Date: 11/08/1979
• Status: Expired due to Term

• Current Assignee: Institute Of Gas Technology (GTI Energy)
• Original Assignee: Institute Of Gas Technology (GTI Energy)
• Inventors: Sammells, Anthony F., Ang, Peter G. P.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/092,484
• Time in Patent Office: 411 Days
• Field of Search: 429/111, 429/41, 429/44, 429/45, 429/13, 204/59 R, 204/72-75, 204/77, 204/102, 204/DIG. 3, 204/252, 204/265, 204/266, 204/280
• US Class Current: 205/340
• CPC Class Codes: C25B 1/55 Photoelectrolysis
• CPC Class Codes: C25B 3/25 Reduction
• CPC Class Codes: Y10S 204/03 Auxiliary internally generated electrical energy

Abstract

A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO₂ photoreduction and fuel gas photo-oxidation. The gas diffusion photosensitive electrode has a central electrolyte-porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.

Claims

1. A gas diffusion semiconductor solar cell comprising in combination:

a gas diffusion photosensitive electrode comprising a central electrolyte-porous matrix layer having an activated semiconductor material on one side in contact with an electrolyte forming one side of a flowing liquid electrolyte chamber and a hydrophobic gas diffusion region on the opposite side of said porous matrix layer;

an opposing light passing counterelectrode forming the opposite side of said electrolyte chamber whereby light may pass through said counterelectrode and said liquid electrolyte to illuminate said semiconductor material;

said electrolyte within said electrolyte chamber capable of providing ionic conductance between said electrode and counterelectrode, said electrolyte chamber having a light passing and ionic conducting separator for chemical separation of anolyte and catholyte portions of the electrolyte; and

an external electrical circuit between said electrode and counterelectrode.

2. The gas diffusion semiconductor solar cell of claim 1 wherein said porous matrix diffusion layer has a hydrophobic diffusion region on its exterior surface comprising a material allowing gas passage into said porous matrix while preventing electrolyte liquid passage from the cell.

3. The gas diffusion semiconductor solar cell of claim 2 wherein said hydrophobic diffusion region comprises polytetrafluoroethylene coating or sheet.

4. The gas diffusion semiconductor solar cell of claim 1 wherein said porous matrix is made of a material selected from the group consisting of polytetrafluoroethylene, fritted glass, nickel, titanium, carbon, graphite and mixtures thereof.

5. The gas diffusion semiconductor solar cell of claim 1 wherein said porous matrix has electrical conductivity and serves as a current collector.

6. The gas diffusion semiconductor solar cell of claim 1 wherein said porous matrix is a non-electrical conductor and has a separate electrically conductive current collector.

7. The gas diffusion semiconductor solar cell of claim 1 wherein said semiconductor material is a p-type semiconductor.

8. The gas diffusion semiconductor solar cell of claim 7 wherein said p-type semiconductor is an appropriately doped material selected from the group consisting of GaP, ZnTe, InP, SiC and Si.

9. The gas diffusion semiconductor solar cell of claim 8 wherein said p-type semiconductor is selected from the group consisting of Zn-doped GaP, Ag-doped ZnTe, Zn-doped InP, Al-doped SiC and B-doped Si.

10. The gas diffusion semiconductor solar cell of claim 1 wherein said semiconductor material is an n-type semiconductor.

11. The gas diffusion semiconductor solar cell of claim 10 wherein said n-type semiconductor is an appropriately doped material selected from the group consisting of GaAs, CdSe, TiO₂, MoS₂, Si, MoSe₂ and Fe₂ O₃.

12. The gas diffusion semiconductor solar cell of claim 1 wherein said counterelectrode comprises a light passing structure selected from the group consisting of nickel, platinum, ruthenium, titanium, carbon, tin oxide and indium oxide.

13. The gas diffusion semiconductor solar cell of claim 1 wherein said separator is a light passing membrane selected from the group consisting of sulfonated perfluoropolyethylene, polyethylene, polyvinylchloride, nylon, polymethacrylic acid and Thirsty Glass.

14. The gas diffusion semiconductor solar cell of claim 1 wherein said electrolyte is selected from the group consisting of acidic and basic aqueous electrolytes.

15. The gas diffusion semiconductor solar cell of claim 1 wherein said electrolyte is a non-aqueous electrolyte.

16. In a gas diffusion semiconductor solar cell, a gas diffusion photosensitive electrode comprising;

a central electrolyte-porous matrix layer having an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas for passage in sequence through said hydrophobic gas diffusion region and said central porous matrix layer to contact the semiconductor-electrolyte interface causing photofixation of said gas upon illumination of said semiconductor material.

17. The gas diffusion photosensitive electrode of claim 16 wherein said porous matrix diffusion layer has a hydrophobic diffusion region on its exterior surface comprising a material allowing gas passage into said porous matrix while preventing electrolyte liquid passage from the cell.

18. The gas diffusion photosensitive electrode of claim 17 wherein said hydrophobic diffusion region comprises polytetrafluoroethylene coating or sheet.

19. The gas diffusion photosensitive electrode of claim 16 wherein said porous matrix is made of a material selected from the group consisting of polytetrafluoroethylene, fritted glass, nickel, titanium, carbon, graphite and mixtures thereof.

20. The gas diffusion photosensitive electrode of claim 16 wherein said porous matrix has electrical conductivity and serves as a current collector.

21. The gas diffusion photosensitive electrode of claim 16 wherein said porous matrix is a non-electrical conductor and has a separate electrically conducting current collector.

22. The gas diffusion photosensitive electrode of claim 16 wherein said semiconductor material is a p-type semiconductor.

23. The gas diffusion photosensitive electrode of claim 22 wherein said p-type semiconductor is an appropriately doped material selected from the group consisting of GaP, ZnTe, InP, SiC and Si.

24. The gas diffusion photosensitive electrode of claim 23 wherein said p-type semiconductor is selected from the group consisting of Zn-doped GaP, Ag-doped ZnTe, Zn-doped InP, Zn-doped SiC and B-doped Si.

25. The gas diffusion photosensitive electrode of claim 16 wherein said semiconductor material is an n-type semiconductor.

26. The gas diffusion photosensitive electrode of claim 25 wherein said n-type semiconductor is an appropriately doped material selected from the group consisting of GaAs, CdSe, TiO₂, MoS₂, Si, MoSe₂ and Fe₂ O₃.

27. A process for gaseous photofixation comprising the steps:

passing a gas through a hydrophobic gas diffusion region on one side of a porous matrix diffusion layer of a gas diffusion photosensitive electrode and contacting a semiconductor material supported by the other side of said porous matrix diffusion layer;

passing illumination through an opposing light passing counterelectrode and a liquid electrolyte in contact with said counterelectrode and said electrode to illuminate said semiconductor producing a shift in the potential of the semiconductor causing an electrode photocurrent, said electrode photocurrent causing fixation of said gas by reduction of the gas with a p-type semiconductor at the semiconductor-electrolyte interface with concomitant oxidation of the electrolyte at the counterelectrode or oxidation of the gas with an n-type semiconductor at the semiconductor-electrolyte interface with concomitant reduction of the electrolyte at the counterelectrode;

providing ionic conductance between the electrode and counterelectrode by a flowing liquid electrolyte in contact with said electrode and counterelectrode, the anolyte and catholyte portions of the electrolyte being chemically separated by a light passing and ionic conducting separator;

providing removal of the fixed gas from and supply of electroactive electrolyte to said electrode by said flowing electrolyte; and

passing electrons through an external electronic circuit for completion of the electronic circuit.

28. The process of claim 27 wherein said hydrophobic gas diffusion region comprises polytetrafluoroethylene coating or sheet.

29. The process of claim 27 wherein said porous matrix is made of a material selected from the group consisting of polytetrafluoroethylene, fritted glass, nickel, titanium, carbon, graphite and mixtures thereof.

30. The process of claim 27 wherein said porous matrix is a non-electrical conductor and has a separate electrically conducting current collector.

31. The process of claim 27 wherein said semiconductor material is a p-type semiconductor.

32. The process of claim 31 wherein said p-type semiconductor is an appropriately doped material selected from the group consisting of GaP, ZnTe, InP, SiC and Si.

33. The process of claim 27 wherein said semiconductor material is an n-type semiconductor.

34. The process of claim 33 wherein said n-type semiconductor is an appropriately doped material selected from the group consisting of GaAs, TiO₂, CdSe, MoS₂, Si, MoSe₂ and Fe₂ O₃.

35. The process of claim 27 wherein said counterelectrode comprises a light passing structure selected from the group consisting of nickel, ruthenium, platinum, titanium, carbon, tin oxide and indium oxide.

36. The process of claim 27 wherein said separator is a light passing membrane selected from the group consisting of sulfonated perfluoropolyethylene, polyethylene, polyvinylchloride, nylon, polymethacrylic acid and Thirsty Glass.

37. The process of claim 27 wherein said electrolyte is selected from the group consisting of acidic and basic aqueous electrolytes.

38. The process of claim 27 wherein said electrolyte is a non-aqueous electrolyte.

39. A process for molecular gas photo-reduction comprising the steps:

passing molecular gas to be reduced through a hydrophobic gas diffusion region on one side of a porous matrix diffusion layer of a gas diffusion photosensitive cathode and contacting a p-type semiconductor supported by the other side of said porous matrix diffusion layer;

passing illumination through an opposing light passing anode and a liquid electrolyte in contact with said anode and said cathode to illuminate said p-type semiconductor producing a positive shift in the potential of the semiconductor causing a cathodic photocurrent, said cathodic photocurrent causing reduction of the molecular gas to a fixed state at the semiconductor-electrolyte interface with concomitant oxidation of the electrolyte at the anode;

providing ionic conductance between the cathode and anode by a flowing liquid electrolyte in contact with said cathode and anode, the anolyte and catholyte portions of the electrolyte being chemically separated by a light passing and ionic conducting separator;

providing removal of the formed fixed material from and supply of electroactive electrolyte to said cathode by said flowing electrolyte; and

passing electrons produced by oxidation of said electrolyte at said anode through an external electronic circuit to said cathode for completion of the electronic circuit, said external electronic circuit providing a bias voltage to said cathode from an external power source.

40. The process for molecular gas photoreduction of claim 39 wherein said hydrophobic gas diffusion region comprises polytetrafluoroethylene coating or sheet.

41. The process for molecular gas photoreduction of claim 39 wherein said porous matrix is made of a material selected from the group consisting of polytetrafluoroethylene, fritted glass, nickel, titanium, carbon, graphite and mixtures thereof.

42. The process for molecular gas photoreduction of claim 39 wherein said porous matrix has electrical conductivity and serves as a current collector.

43. The process for molecular gas photoreduction of claim 39 wherein said porous matrix is a non-electrical conductor and has a separate electrically conducting current collector.

44. The process for molecular gas photoreduction of claim 39 wherein said p-type semiconductor is an appropriately doped material selected from the group consisting of GaP, ZnTe, InP, SiC and Si.

45. The process for molecular gas photoreduction of claim 44 wherein said p-type semiconductor is selected from the group consisting of Zn-doped GaP, Ag-doped ZnTe, Zn-doped InP, Al-doped SiC and B-doped Si.

46. The process for molecular gas photoreduction of claim 39 wherein said counterelectrode comprises a light passing structure selected from the group consisting of nickel, platimum, titanium, carbon, ruthenium, tin oxide and indium oxide.

47. The process for molecular gas photoreduction of claim 39 wherein said separator is a light passing membrane selected from the group consisting of sulfonated perfluoropolyethylene, polyethylene, polyvinylchloride, nylon, polymethacrylic acid and Thirsty Glass.

48. The process for molecular gas photoreduction of claim 39 wherein said electrolyte is selected from the group consisting of acidic and basic aqueous electrolytes.

49. The process for molecular gas photoreduction of claim 39 wherein said electrolyte is a non-aqueous electrolyte.

50. The process for molecular gas photoreduction of claim 39 wherein said molecular gas is nitrogen which is reduced to ammonia or hydrazine.

51. The process for molecular gas photoreduction of claim 39 wherein said molecular gas is carbon dioxide which is reduced to methanol or methane.

52. A process for fuel gas photo oxidation comprising the steps:

passing fuel gas selected from the group consisting of methane, butane, propane, carbon monoxide and ammonia to be oxidized through a hydrophobic gas diffusion region on one side of a porous matrix diffusion layer of a gas diffusion photosensitive anode and contacting an n-type semiconductor supported by the other side of said porous matrix diffusion layer;

illuminating said n-type semiconductor producing a negative shift in the potential of the semiconductor causing an anodic photocurrent, said anodic photocurrent causing oxidation of said fuel gas at the semiconductor-electrolyte interface with concomitant reduction at a gas diffusion oxygen/air cathode;

providing ionic conductance between the cathode and anode by a liquid electrolyte in contact with said cathode and anode; and

withdrawing electrical energy in an external circuit between the electrodes.