Electrolytic blocking contact to InP

• US 4,241,167 A
• Filed: 05/25/1979
• Issued: 12/23/1980
• Est. Priority Date: 05/25/1979
• Status: Expired due to Term

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Collins, David A., Lile, Derek L.
• Primary Examiner(s): Smith, John D.
• Application Number:
  US06/042,466
• Time in Patent Office: 578 Days
• Field of Search: 427/82, 427/84, 427/87, 357/66, 430/314, 29/574, 361/433, 324/158 D, 148/33.3
• US Class Current: 430/314
• CPC Class Codes: G01R 31/2632 for testing diodes
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/475 on AIII-BV compounds
• CPC Class Codes: Y10S 204/06 Unusual non-204 uses of electrolysis

Abstract

A liquid barrier contact to InP made of 40% tartatic acid and 30% hydrogen peroxide in a 3:1 ratio by volume is used for capacitance-voltage carrier profiling to large voltages (>10 V) on relatively heavily doped material (>10¹⁷ CM^-3) and at room temperature.

Claims

1. A liquid barrier contact on InP comprising:

approximately 40% aqueous solution of tartaric acid;

approximately 30% aqueous peroxide;

said tartaric acid and said hydrogen peroxide being combined

in an approximate 3;

1 ratio, respectively, by volume.

2. A liquid barrier contact on InP comprising:

40% aqueous solution of tartaric acid and 30% aqueous hydrogen peroxide mixed in a 3;

1, respectively, by volume.

3. In a method of measuring the carrier concentration profile of a semiconducting InP speciman wherein the profile is obtained from measurements of electronic parameters of capacitance and voltage taken across a Schottky diode formed by depositing a rectifying contact upon the semiconducting InP specimen, the improvement comprising the steps of:

coating the InP specimen with photoresist;

forming an aperture in the photoresist to expose an area of InP;

slightly etching said exposed area;

depositing a liquid on said exposed area comprising approximately 40% aqueous solution of tartaric acid mixed with an approximately 30% aqueous solution of hydrogen peroxide in an approximate 3;

1 ratio, respectively, by volume.

4. In a method of measuring the carrier concentration profile of a semiconducting InP specimen wherein the profile is obtained from measurements of electronic parameters of capacitance and voltage taken across a Schottky diode formed by depositing a rectifying contact upon the semiconducting InP specimen, the improvement comprising the steps of:

coating the InP specimen with photoresist;

forming an aperture in the photoresist to expose an area of InP;

slightly etching said exposed area;

depositing a liquid on said exposed area comprising 40% aqueous solution of tartaric acid mixed with 30% aqueous solution of hydrogen peroxide in a 3;

1 ratio, respectively, by volume.