Visible light and near infrared imaging device

• US 4,242,706 A
• Filed: 11/13/1978
• Issued: 12/30/1980
• Est. Priority Date: 11/13/1978
• Status: Expired due to Term

• Current Assignee: Raytheon TI Systems, Inc. (Rtx Corporation)
• Original Assignee: Texas Instruments, Inc.
• Inventors: Robinson, James E., Dudley, Dana, Knight, William M. Jr., McCormack, Kent
• Primary Examiner(s): Griffin, Robert L.
• Assistant Examiner(s): Coles, Edward L.
• Application Number:
  US05/960,496
• Time in Patent Office: 778 Days
• Field of Search: 358/213, 358/113, 250/211 J, 250/338, 250/330, 250/332, 250/333, 357/30, 357/31, 357/32
• US Class Current: 348/164
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 25/779 Circuitry for scanning or addressing the pixel array
• CPC Class Codes: H04N 3/1512 for MOS image-sensors, e.g. MOS-CCD H04N3/1581 takes precedence

Abstract

A visible light and near infrared imaging device is disclosed. The imaging device comprises X-Y addressing means, an array of opto-electronic semiconductor elements or cells, a multiplexer, a precharge switch, and an amplifier. The X-Y addressing means selectively addresses each cell of the array of opto-electronic semiconductor cells and corresponding multiplexer switch for connecting a reference voltage to each cell to charge each element to the reference voltage, then to isolate each element and vary its voltage in proportion to the intensity of the impinging light, and finally to read out selectively the voltage of each element to the amplifier for amplifying the electrical signals representative of the light intensity to a working level for processing into video signals.

Claims

1. An imaging device comprising:

an addressing means;

an array of optoelectronic semiconductor elements selectively connected to the addressing means;

a multiplexer connected to the array of optoelectronic semiconductor elements;

a precharge means including a time controlled switch connected to the multiplexer; and

an amplifier connected to the multiplexer, said array of optoelectronic semiconductor elements having its elements arranged for exposure to light emanating from a scene in the field of view for converting the light into electrical signals representative of the impinging light, and said precharge means, addressing means and multiplexer for alternately charging the elements of the array of optoelectronic semiconductor elements to a preselected voltage and connecting the electrical signals of the elements of the array of optoelectric semiconductor elements representing the intensity of light impinging thereon to the amplifier, said amplifier for amplifying the outputs of the array of optoelectronic semiconductor elements to a working level for processing into video signals for display.

2. An imaging device according to claim 1 wherein the precharge means comprises a MOSFET switch having drain, gate, and source electrodes, said drain electrode for connection to a reference voltage, said source electrode connected to the multiplexer, and said gate connected to a timer for selectively energizing the MOSFET switch to apply the reference voltage to the multiplexer for selected application of the reference voltage to the array of photoelectronic semiconductor elements.

3. An imaging device according to claim 1 wherein said addressing means comprises an X address circuit and a Y address circuit.

4. An imaging device according to claim 2 wherein the array of optoelectric semiconductor elements has its elements arranged in rows and columns with the rows of elements connected to the Y address circuit and the columns of elements connected to the X address circuit.

5. An imaging device according to claim 4 wherein said array of optoelectronic semiconductor elements is a metal oxide semiconductor integrated circuit.

6. An imaging device according to claim 4 wherein each element of the array of optoelectronic semiconductor elements comprises a photodiode and a switching means, said switching means operative in response to X and Y addresses for accessing the photodiode.

7. An imaging device according to claim 6 wherein each photodiode of the array of optoelectronic semiconductor elements comprises an n+ type conductivity region in a p type conductivity silicon substrate, said n+ type conductivity region forming with said p-type conductivity substrate a p-n junction whereby light falling on the p-n junction produces free electrons flowing from p to n.

8. An imaging device according to claim 6 wherein the switching means of the element comprises first and second switches connected in cascade, said first switch connected to the Y address circuit and said second switch connected to the X address circuit.

9. An imaging device according to claim 6 wherein the switching means comprises a plurality of MOSFET switches connected in series.

10. An imaging device according to claim 6 wherein the switching means comprises a dual gate MOSFET switch having a first gate connected to the Y address circuit and the second gate connected to the X address circuit.

11. An imaging device according to claim 10 wherein said dual gate MOSFET switch comprises a first n+ region in contact with the n+ region of the photodiode and a second n+ region in a spaced relationship to the first n+ region, said first and second n+ regions forming, respectively, the drain and source regions, and a dual gate metallization having first and second electrodes for connection to the X and Y address circuits.