Infrared multilayer film thickness measuring method and apparatus

• US 4,243,882 A
• Filed: 03/02/1979
• Issued: 01/06/1981
• Est. Priority Date: 03/10/1978
• Status: Expired due to Term

• Current Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
• Original Assignee: Asahi-Dow Limited
• Inventors: Shiratori, Naoyuki, Yasujima, Akitaka, Ishikawa, Shingo
• Primary Examiner(s): Willis, Davis L.
• Application Number:
  US06/016,754
• Time in Patent Office: 676 Days
• Field of Search: 250/339, 250/340, 250/341, 250/358 R, 250/359, 250/360, 356/51, 356/433
• US Class Current: 250/339.06
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G01B 11/0633 using one or more discrete wavelengths
• CPC Class Codes: G01N 21/314 with comparison of measurements at specific and non-specific wavelengths dual wavelength spectrometry G01J3/427

Abstract

A method and an apparatus for measuring the thicknesses of film layers of different synthetic resins forming a composite multilayer film or sheet by utilizing infrared rays. Infrared rays of sample wavelengths, each equal to the infrared absorption wavelength of each film layer, and at least one reference wavelength different from the infrared absorption wavelength of each film layer are projected onto the multilayer film to be measured. Ratios are obtained between the amounts of infrared lights of the sample and reference wavelengths transmitted through the multilayer film. An operation is achieved for solving a simultaneous equation including the ratios and the infrared absorption coefficients of the film layers at the sample and reference wavelengths as coefficients and the thicknesses of the film layers as unknowns, thereby obtaining the thicknesses of the film layers.

Claims

1. An infrared multilayered film thickness measuring method comprising the steps of:

projecting an infrared ray including a plurality of sample wavelengths and at least one reference wavelength onto a composite multilayer film or sheet composed of a plurality of film layers of different synthetic resins, the infrared absorption wavelengths of each of the film layers coinciding with at least one of the sample wavelengths and the reference wavelength being selected not to coincide with the infrared absorption wavelength of each film layer;

obtaining ratios between the amounts of infrared rays of the respective sample wavelengths transmitted through the multilayer film and the amount of infrared rays of the reference wavelength transmitted through the multilayer film;

performing an operation for solving a simultaneous equation including the ratios and the infrared absorption coefficients of the film layers at the sample and reference wavelengths as coefficients and the thicknesses of the film layers as unknowns, thereby obtaining the thicknesses of the film layers.

2. An infrared multilayer film thickness measuring method according to claim 1, wherein a spectroscopically unseparated infrared ray is projected onto the multilayer film, and wherein an infrared ray transmitted through the multilayer film is separated into infrared monochromatic lights of the sample and reference wavelengths to detect the amounts of infrared lights of the respective wavelengths.

3. An infrared multilayer film thickness measuring method according to claim 1, wherein a spectroscopically unseparated infrared ray is projected onto the multilayer film, wherein an infrared ray reflected and scattered on the plane opposite from the plane of incidence of the multilayer film is separated into infrared monochromatic lights of the sample and reference wavelengths to detect the amounts of infrared lights of the respective wavelengths.

4. An infrared multilayer film thickness measuring method according to claim 1, wherein a spectroscopically unseparated infrared ray is projected onto the multilayer film, wherein an infrared ray transmitted through the multilayer film is reflected back to be retransmitted therethrough along substantially the same light path as that of the first transmission, wherein the infrared ray retransmitted through the multilayer film is separated into infrared monochromatic lights of the sample and reference wavelengths to detect the amounts of infrared lights of the respective wavelength.

5. An infrared multilayer film thickness measuring method according to claim 1, wherein spectroscopically preseparated infrared monochromatic lights of the sample and reference wavelengths are successively projected onto the multilayer film to successively detect the amounts of infrared lights of the respective wavelengths transmitted through the multilayer film.

6. An infrared multilayer film thickness measuring method according to claim 1, wherein spectroscopically preseparated infrared monochromatic lights of the sample and reference wavelengths are successively projected onto the multilayer film to successively detect the amounts of infrared lights of the respective wavelengths reflected by and scattered on the plane opposite from the plane of incidence of the multilayer film.

7. An infrared multilayer film thickness measuring method according to claim 1, wherein spectroscopically preseparated infrared monochromatic lights of the sample and reference wavelengths are successively projected onto the multilayer film, and wherein infrared rays transmitted through the multilayer film are reflected back to be retransmitted therethrough on substantially the same light paths as those of the first transmission, and wherein the amounts of infrared lights of the respective wavelengths retransmitted through the multilayer film are detected.

8. An infrared multilayer film thickness measuring method according to any one of claims 1 to 7, wherein only the infrared monochromatic lights of the sample and reference wavelengths are obtained by discretely separating the infrared ray spectroscopically.

9. An infrared multilayer film thickness measuring method according to any one of claims 1 to 7, wherein the infrared monochromatic lights of the respective wavelengths are obtained by continuously separating the infrared ray spectroscopically over an infrared wavelength range covering the infrared monochromatic lights of the sample and reference wavelengths.

10. An infrared multilayer film thickness measuring method according to any one of claims 1 to 7, wherein the amounts of infrared lights of the sample and reference wavelengths transmitted through the multilayer films are detected by a single photo detector on a time divided basis.

11. An infrared multilayer film thickness measuring apparatus comprising:

a projector unit for projecting an infrared ray including a plurality of sample wavelengths and at least one reference wavelength onto a composite multilayer film layers of different synthetic resins, the infrared absorption wavelength of each of the film layers coinciding with at least one of the sample wavelengths and the reference wavelength being selected not to coincide with the infrared absorption wavelength of each film layer;

a photo detector unit for receiving an infrared ray transmitted through the multilayer film at least once to detect the intensity of transmitted infrared light; and

an electrical processing unit for separating a light-intensity signal from the photo detector unit into sample signals indicating the intensity of infrared lights of the sample wavelengths and a reference signal indicating the intensity of the infrared light of the reference wavelength, obtaining ratios between the sample signals and the reference signal and solving a simultaneous equation including the ratios and the infrared absorption coefficients of the film layers at the sample and reference wavelengths as coefficients and the thicknesses of the film layers as unknowns, thereby obtaining the thicknesses of the film layers.

12. An infrared multilayer film thickness measuring apparatus according to claim 11, wherein the electrical processing unit comprises a processing part for processing the light-intensity signal detected by the photo detector unit to obtain the sample signals and the reference signal and an operation processing part for obtaining the ratios between the sample signals and the reference signal and solving a simultaneous equation including the ratios, and the infrared absorption coefficients of the film layers at the sample and reference wavelengths as coefficients and the thicknesses of the film layers as unknowns, thereby obtaining the thicknesses of the film layers.

13. An infrared multilayer film thickness measuring apparatus according to claim 11, which further comprises means for applying infrared rays of the respective wavelengths on a time divided basis to a single photo detector provided in the photo detector unit.

14. An infrared multilayer film thickness measuring apparatus according to claim 13, wherein the infrared applying means is arranged so that narrow-band, infrared band-pass interference filters respectively permitting the passage therethrough of infrared monochromatic lights of the sample and reference wavelengths are successively intercepted spectroscopically the unseparated infrared lights.

15. An infrared multilayer film thickness measuring apparatus according to claim 11, wherein the projector unit and the photo detector unit are disposed on both sides of the multilayer film.

16. An infrared multilayer film thickness measuring apparatus according to claim 11, wherein the projector unit and the photo detector unit are disposed on the same side with respect to the multilayer film, wherein the infrared ray projected from the projector onto the multilayer film is reflected and scattered on the plane on the opposite side from the plane of incidence of the multilayer film, and wherein the reflected and scattered light is received by the photo detector unit.

17. An infrared multilayer film thickness measuring apparatus according to claim 11, wherein the projector unit and the photo detector unit are disposed on the same side with respect to the multilayer film, wherein a reflector unit is disposed opposite the projector unit and the photo detector unit across the multilayer film, wherein the reflector unit reflects the infrared ray transmitted through the multilayer film back to be retransmitted therethrough along substantially the same light path as that of the first transmission, and wherein at least one portion of the transmitted light reflected from the reflector unit towards the projector unit is branched by a branch unit to be incident on the photo detector unit.

18. An infrared multilayer film thickness measuring apparatus according to claim 17, wherein the reflector unit is a corner cube.

19. An infrared multilayer film thickness measuring apparatus according to claim 11, wherein the operation processing unit includes a common logarithmic ratio circuit for obtaining the ratios.

20. An infrared multilayer film thickness measuring apparatus according to claim 11, wherein the projector unit is so arranged as to project an infrared monochromatic light over a certain infrared wavelength range while continuously changing its wavelength, and wherein the electrical processing unit includes means for separating the components of the sample and reference wavelength in synchronism with the continuous wavelength change of the infrared monochromatic light.

21. An infrared multilayer film thickness measuring apparatus according to claim 20, wherein the projector unit comprises a light source for producing a spectroscopically unseparated infrared ray, an infrared band-pass interference filter selecting the infrared ray, and means for changing the angle of incidence of the infrared ray to the infrared band-pass interference filter relative to each other.