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PNPN Semiconductor switches

  • US 4,244,000 A
  • Filed: 11/20/1979
  • Issued: 01/06/1981
  • Est. Priority Date: 11/28/1978
  • Status: Expired due to Term
First Claim
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1. A PNPN semiconductor switch comprising:

  • (a) an N conductivity type semiconductor substrate,(b) a P conductivity type P gate region,(c) a P conductivity type anode region formed in said semiconductor substrate at a position which is a predetermined distance from said P gate region,(d) an N conductivity type cathode region formed in said P gate region,(e) an N conductivity type drain region formed in said P gate region at a position which is spaced from said N conductivity type cathode region,(f) a first insulating layer formed on the surface of said substrate between said cathode region and said drain region,(g) a first gate electrode formed on said first gate insulating layer,(h) a second gate insulating layer formed on said first gate electrode,(i) a third insulating layer formed on the surface of said substrate between said anode region and said P gate region,(j) a P gate electrode electrically connected to said drain region and said P gate region,(k) a resistance region connected between said first gate electrode and said P gate electrode,(l) a second gate electrode mounted on said second gate insulating layer,(m) a cathode electrode electrically connected to said cathode region, and(n) an anode electrode electrically connected to said anode region.

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