Semiconductor X-ray detector
First Claim
1. In an x-ray measuring arrangement with an x-ray tube having a focus and producing a fan-shaped x-ray beam extending from the focus for irradiating the entire cross section of a patient simultaneously, the x-ray tube being rotatable about the patient with the fan-shaped x-ray beam scanning a cross-section of the patient corresponding to the thickness of the fan-shaped x-ray beam, and a semiconductor x-ray detector curved about the focus of the x-ray tube and rotatable jointly with said x-ray tube about the patient, said detector comprising:
- a plurality of fluorescent layers for converting the energy of the fan-shaped x-ray beam into light;
a plurality of separate light sensitive semiconductor diodes;
each member of said plurality of diodes is positioned between an associated pair of adjacent fluorescent layers forming an elongated row, each member of said plurality of fluorescent layers has an active edge directed toward the focus of the x-ray tube with each of said active edges of said fluorescent layers being equidistant from the focus and in the path of successive portions of said fan-shaped x-ray beam, each of said fluorescent layers has a pair of broad, spaced apart light-emitting faces directed longitudinally of said elongated row of semiconductor diodes and fluorescent layers and toward each of said adjacent semiconductor diodes, each of said semiconductor diodes has a pair of spaced apart, broad, light sensing surfaces directed longitudinally of said row and adjacent to respective fluorescent layers such that each said semiconductor diode receives activating light energy from said broad surfaces of a pair of adjacent fluorescent layers and generates an electrical output proportional to the sensed light energy.
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Accused Products
Abstract
In the illustrated embodiments a row of semiconductor diodes is provided with intervening fluorescent layers and with fluorescent layers at the opposite ends. The x-radiation may impinge on one end of the detector such that the additional layers provide increased sensitivity. In a second embodiment, the radiation impinges laterally of the detector so that each fluorescent layer receives an individual sample of the impinging radiation, and the output from respective diodes may be individually stored as a measure of the respective samples. In an illustrated x-ray tomographic apparatus, the edge faces of the fluorescent layers are equidistant from the focus of the x-ray tube so as to sample successive portions of a fan-shaped x-ray beam.
15 Citations
1 Claim
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1. In an x-ray measuring arrangement with an x-ray tube having a focus and producing a fan-shaped x-ray beam extending from the focus for irradiating the entire cross section of a patient simultaneously, the x-ray tube being rotatable about the patient with the fan-shaped x-ray beam scanning a cross-section of the patient corresponding to the thickness of the fan-shaped x-ray beam, and a semiconductor x-ray detector curved about the focus of the x-ray tube and rotatable jointly with said x-ray tube about the patient, said detector comprising:
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a plurality of fluorescent layers for converting the energy of the fan-shaped x-ray beam into light; a plurality of separate light sensitive semiconductor diodes; each member of said plurality of diodes is positioned between an associated pair of adjacent fluorescent layers forming an elongated row, each member of said plurality of fluorescent layers has an active edge directed toward the focus of the x-ray tube with each of said active edges of said fluorescent layers being equidistant from the focus and in the path of successive portions of said fan-shaped x-ray beam, each of said fluorescent layers has a pair of broad, spaced apart light-emitting faces directed longitudinally of said elongated row of semiconductor diodes and fluorescent layers and toward each of said adjacent semiconductor diodes, each of said semiconductor diodes has a pair of spaced apart, broad, light sensing surfaces directed longitudinally of said row and adjacent to respective fluorescent layers such that each said semiconductor diode receives activating light energy from said broad surfaces of a pair of adjacent fluorescent layers and generates an electrical output proportional to the sensed light energy.
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Specification