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Semiconductor devices having VMOS transistors and VMOS dynamic memory cells

  • US 4,250,519 A
  • Filed: 08/31/1979
  • Issued: 02/10/1981
  • Est. Priority Date: 08/31/1978
  • Status: Expired due to Term
First Claim
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1. A semiconductor device which has V-groove metal oxide semiconductor (VMOS) transistors and VMOS dynamic memory cells, comprising:

  • a lightly doped semiconductor single-crystalline substrate of a first conductivity type;

    a semiconductor epitaxial layer of the opposite conductivity type formed selectively on said substrate, said epitaxial layer having V-grooves for the VMOS transistors and the VMOS dynamic memory cells and having heavily doped regions of the first conductivity type adjacent said V-grooves at the surface portions of said epitaxial layer;

    an oxide layer formed on said V-grooves and epitaxial layer;

    electrode layers formed on said oxide layer in said V-grooves;

    a first heavily doped region of the first conductivity type formed in a first surface portion of said substrate, the bottom peaks of said V-grooves of said VMOS transistors reaching to said first heavily doped region; and

    second heavily doped regions of the first conductivity type formed in a third heavily doped region of the opposite conductivity type, said third heavily doped region being formed in a second surface portion of said substrate, each bottom peak of said V-grooves of said VMOS dynamic memory cells reaching to a separate one of said second heavily doped regions

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