Photovoltaic cell array

• US 4,254,546 A
• Filed: 09/11/1978
• Issued: 03/10/1981
• Est. Priority Date: 09/11/1978
• Status: Expired due to Term

• Current Assignee: S.E.S. Co., Ltd.
• Original Assignee: S.E.S. Co., Ltd.
• Inventors: Ullery, Lee R. Jr.
• Primary Examiner(s): Tupman, W. C.
• Application Number:
  US05/940,919
• Time in Patent Office: 911 Days
• Field of Search: 29/572, 29/589, 29/590, 252/513, 252/514
• US Class Current: 438/66
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/03365 comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

In a photovoltaic cell which comprises: a substrate, a bottom electrode, a first layer of cadmium sulfide, a second layer of cuprous sulfide forming a barrier junction with said first layer and a top electrode, the improvement wherein said substrate is an insulative ceramic material and the bottom electrode is a conductive ceramic layer fused to said substrate. Said conductive layer is optionally coated with a metal having a high electrical conductivity.

Claims

1. A method of making an integrated array of connected, thin-film, photovoltaic cells comprising:

(1) providing a substrate of insulating material;

(2) coating a major surface of said substrate with a paste which upon heat treating provides a sintered conductive ceramic layer forming a plurality of electrically conductive bottom electrodes, a separate one of said bottom electrodes being for each of said cells, said paste comprising from about 5 to about 85 percent by weight of finely divided metal particles, from about 1 to about 75 percent by weight of a metal oxide capable of forming, upon firing, a metal oxide-silica complex, from about 2 to about 60 percent by weight of a glass frit compatible with and capable of bonding with said substrate, from about 0.05 to about 10 percent by weight of a screening agent(s) and from about 5 to about 45 percent by weight of a solvent;

(3) heat treating the paste coated substrate produced in step (2) above to dry and remove solvent and screening agents from said paste and to convert said paste to an electrically conductive ceramic which is bonded to said substrate, forming said bottom electrodes;

(4) coating each of said bottom electrodes, except for a portion adjacent an edge thereof, with a film of first semiconductor material of one type conductivity;

(5) coating each of said films of one type conductivity with a relatively thin film of second semiconductor material of an opposite type conductivity, and forming a p-n junction therewith; and

(6) attaching a light transmitting top electrode on each of said second semiconductor films, and connecting top and bottom electrodes of one cell with selected top and bottom electrodes of adjacent cells to provide series or parallel arrangement of the cells.

2. The method of claim 1, wherein said paste comprises from about 30 to about 85 percent by weight of the finely divided metal particles, from about 1 to about 40 percent by weight of the metal oxide and from about 3 to about 30 percent by weight of the glass frit.

3. The method of claim 1, wherein said paste comprises from about 5 to about 40 percent by weight of the metal particles.

4. The method of claim 1, wherein the conducting ceramic is coated with at least one metal layer, one of which provides ohmic contact with the first semiconductor material, prior to coating the bottom electrode with the film of the first semiconductor material.

5. The method of claim 4, wherein said metal particles are copper, said metal oxide comprises cuprous oxide, said metal coating is zinc, said first semiconductor material is cadmium sulfide, and said second semiconductor material is cuprous sulfide.

6. The method of claim 1, wherein said paste is dried at a temperature of from about 75°

C. to about 150°

C. for about 0.05 to about 1 hour, heated at from about 100°

C. to about 500°

C. in air to burn out organic material, and fired at from about 500°

C. to about 1100°

C. for from about 0.05 to about 1 hour in an inert atmosphere to fuse the conductive ceramic to the insulating ceramic substrate.

7. The method of claim 1, wherein the paste comprises from about 1 to about 20 percent by weight of a metal oxide fluxing agent.

8. The method of claim 3, wherein the conductive ceramic is coated with at least one metal layer, one of which provides ohmic contact with the first semiconductor material, prior to coating the bottom electrode with a film of the first semiconductor material.

9. The method of claim 8 wherein said metal particles are copper, said metal oxide comprises cuprous oxide, said metal coating is a layer of copper and a layer of zinc with the zinc in ohmic contact with the first semiconductor material, said first semiconductor material is cadmium sulfide, and said second semiconductor material is cuprous sulfide.

10. The method of claim 9, wherein said paste is dried at a temperature of from about 75°

C. to about 150°

C. for about 0.05 to about 1 hour, heated at from about 100°

C. to about 500°

C. in air to burn out organic material, and fired at from about 500°

C. to about 1100°

C. for from about 0.05 to about 1 hour in an inert atmosphere to fuse the conductive ceramic to the insulating ceramic substrate.