Capacitive pressure sensor

• US 4,257,274 A
• Filed: 07/23/1979
• Issued: 03/24/1981
• Est. Priority Date: 07/21/1978
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Kawakami, Kanji, Nishihara, Motohisa, Shimada, Satoshi
• Primary Examiner(s): WOODIEL, DONALD
• Application Number:
  US06/059,552
• Time in Patent Office: 610 Days
• Field of Search: 73/718, 73/724, 73/721, 73/727, 73/777, 361/283
• US Class Current: 73/718
• CPC Class Codes: G01L 13/025 using diaphragms
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0072 using variations in capacitance
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process which makes possible a very accurate dimensioning of the hollow formed by the deflecting portion of the diaphragm. A substrate of borosilicate glass has a flat surface which is placed against the side of the diaphragm in contact with the supporting portion and the two elements are joined by a process of anodic bonding so that a pressure chamber is formed between the substrate and the thin deflecting portion of the diaphragm. Within the pressure chamber, a thin electrode is provided on the surface of the substrate thereby forming electrostatic capacity between the substrate and the diaphragm and a hole is provided through the substrate for supplying of fluid into the pressure chamber.

Claims

1. A capacitive pressure sensor comprising:

a conductive silicon diaphragm having at least at one side thereof a thick peripheral supporting portion and a thin deflecting portion which may be deflected depending on the pressure applied thereto, said thin deflecting portion being surrounded by said thick peripheral supporting portion so as to form a hollow at said one side of said diaphragm;

a substrate of borosilicate glass having an aperture formed therein and at least a flat side face disposed against said one side of said conductive silicon diaphragm so that said hollow of said diaphragm and said flat side face of said substrate form a pressure chamber into which a fluid under pressure to be detected may be supplied through the aperture; and

at least a conductive thin layer provided on a portion of said flat side face of said substrate in said pressure chamber so as to be opposed to said diaphragm thereby forming electrostatic capacity between said conductive thin layer and said conductive silicon diaphragm;

said conductive silicon diaphragm and said substrate being rigidly joined by a process of anodic bonding to seal said pressure chamber, said joining including said thick supporting portion of said diaphragm and a portion of said substrate.

2. The capacitive pressure sensor as defined in claim 1, wherein said thin deflecting portion of said silicon diaphragm is reduced symmetrically from both sides of said thick peripheral supporting portion to form hollows on both sides of said diaphragm.

3. The capacitive pressure sensor as defined in claim 2, further including a second substrate of borosilicate glass with a flat side face;

a thin film electrode provided on the flat side face of said second substrate, said second substrate being disposed against the other side of said silicon diaphragm in contact with said thin peripheral supporting portion of said silicon diaphragm so that a pair of pressure chambers are formed at respective sides of said silicon diaphragm; and

joining means joining said second substrate to said silicon diaphragm by anodic bonding.

11. The capacitive pressure sensor as defined in claims 1, 4 or 7, wherein said thin deflecting portion of said diaphragm is formed by an etching process.

4. A capacitive pressure sensor comprising:

a conductive silicon diaphragm having a thick peripheral supporting portion, a thin deflecting portion surrounded by said supporting portion, and a rigid movable portion surrounded by said thin deflecting portion;

a substrate of borosilicate glass having an aperture formed therein and being disposed on said thick peripheral supporting portion of said diaphragm so as to form a pressure chamber; and

a thin film electrode disposed on one side of said substrate in said pressure chamber thereby to provide electrostatic capacity between said thin film electrode and said rigid movable portion of said diaphragm;

said conductive silicon diaphragm being joined to said substrate by a process of anodic bonding.

5. The capacitive pressure sensor as defined in claim 4, wherein said rigid movable portion is flat.

6. The capacitive pressure sensor as defined in claims 4 or 5, wherein said thin deflecting portion is annular.

7. A capacitive pressure sensor comprising:

a conductive silicon diaphragm having a thick supporting portion and a thin deflecting portion which may be deflected depending on the pressure applied thereto;

a spacer of borosilicate glass having a pair of parallel plane surfaces; and

a substrate of conductive silicon having an aperture formed therein and being disposed on said thick supporting portion of said diaphragm with said spacer interposed therebetween, thereby forming a pressure chamber between said diaphragm and said substrate into which a fluid may be supplied through said aperture of said substrate, the spacing between said substrate and said diaphragm forming electrostatic capacity therebetween;

said conductive silicon diaphragm, said spacer, and said substrate being joined by a process of anodic bonding.

8. The capacitive pressure sensor as defined in claim 7, wherein said conductive silicon diaphragm has a thick movable portion in the central portion thereof, and said thin deflecting portion of said conductive silicon diaphragm is formed between said thick supporting portion and said thick movable portion so that said conductive silicon diaphragm will be deformed only at said thin deflecting portion.

9. The capacitive pressure sensor as defined in claim 8, wherein said thin deflecting portion of said conductive silicon diaphragm is reduced symmetrically in thickness from said thick supporting portion to said thin electrode portion.

10. The capacitive pressure sensor as defined in claim 9, wherein at both sides of said conductive silicon diaphragm, a pair of said pressure chambers are provided each of which is defined by said conductive silicon diaphragm and said substrate for forming electrostatic capacity.