Radiation-sensitive positive resist

• US 4,259,407 A
• Filed: 07/25/1979
• Issued: 03/31/1981
• Est. Priority Date: 07/27/1978
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: VLSI Technology Research Association (Koninklijke Philips N.V.)
• Inventors: Tada, Tsukasa, Shimazaki, Yuzo, Kato, Hirohisa, Saeki, Hideo, Kohda, Masanobu
• Primary Examiner(s): Wong, Jr., Harry
• Application Number:
  US06/060,593
• Time in Patent Office: 615 Days
• Field of Search: 526/245, 526/246, 204/159.22, 428/421
• US Class Current: 428/421
• CPC Class Codes: G03F 7/039 Macromolecular compounds which are photodegradable, e.g. positive electron resists G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023
• CPC Class Codes: Y10T 428/3154 Of fluorinated addition polymer from unsaturated monomers

Abstract

A radiation-sensitive positive resist which is prepared from a homogeneous polymer of any one of the various forms of halogenated alkyl α-halogenated acrylate expressed by the general structural formula: ##STR1## where: X = fluorine, chlorine or bromine

R = alkyl group in which one or more hydrogen atoms are substituted by the corresponding number of fluorine atoms, or aryl group in which said substitution takes place, or alkoxy group in which said substitution takes place, or a copolymer of two or more of the monomers expressed by said general structural formula or a copolymer of any one of said monomers and any one of the different forms of vinyl monomer from those expressed by said general structural formula.

Claims

1. A semiconductor substrate or a mask substrate having coated thereon a coating of a radiation-sensitive positive resist polymer or copolymer, said polymer or copolymer being prepared from at least 50 mol % of one or more halogenated alkyl α

-halogenated acrylate monomers expressed by the general structural formula;

##STR6## where;

X=fluorine, chlorine or bromine,

R=alkyl group, aryl group or alkoxy alkyl group which have 1 to 10 carbon atoms and in which one or more hydrogen atoms are substituted by the corresponding number of fluorine atoms;

and wherein halogen atoms are contained in a number accounting for 32 percent or less of the total number of elements constituting said polymer or copolymer;

said coating having been formed by a process comprising;

(a) forming a resist layer from said polymer or copolymer on a semiconductor substrate or mask substrate;

(b) prebaking said resist layer at an elevated temperature;

(c) irradiating selected portions of said prebaked layer for patterning; and

(d) removing said selected portions of said resist layer.

2. A manufacture according to claim 1, wherein said polymer or copolymer is a copolymer prepared from at least one vinyl monomer differing from said formula (I).

3. A manufacture according to claim 2, wherein said at least one vinyl monomer is at least one selected from the group consisting of (a) a monomer expressed by the general structural formula:

##STR7## where;

R₁ =methyl group, halogenated methyl group, cyano group or halogen element,

R₂ =hydrogen atom, or alkyl group, aryl group, halogenated alkyl group or halogenated aryl group, each group containing 1 to 10 carbon atoms;

(b) a monomer expressed by the general structural formula;

##STR8## where;

R₂ =the same as defined above,

R₃ =methyl group, halogenated methyl group, halogen elements, or cyano group; and

(c) a monomer expressed by the general structural formula;

##STR9## where;

R₂ and R₃ =the same as defined above.

4. A manufacture according to claim 2, wherein said at least one vinyl monomer is at least one selected from the group consisting of isopropenyl alcohol, α

-phenyl vinyl alcohol, vinyl ketones, vinyl ethers, methacrylonitrile, vinylidene fluoride, α

-fluoroacrylonitrile, α

-methyl styrene, and vinyl sulfones.

5. A manufacture according to claim 1, wherein said resist layer was formed on said semiconductor substrate or mask substrate by dissolving said polymer or copolymer in a solvent to prepare a resist solution and coating said resist solution over said semiconductor substrate or mask substrate.