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Radiation-sensitive positive resist

  • US 4,259,407 A
  • Filed: 07/25/1979
  • Issued: 03/31/1981
  • Est. Priority Date: 07/27/1978
  • Status: Expired due to Term
First Claim
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1. A semiconductor substrate or a mask substrate having coated thereon a coating of a radiation-sensitive positive resist polymer or copolymer, said polymer or copolymer being prepared from at least 50 mol % of one or more halogenated alkyl α

  • -halogenated acrylate monomers expressed by the general structural formula;

    ##STR6## where;

    X=fluorine, chlorine or bromine,R=alkyl group, aryl group or alkoxy alkyl group which have 1 to 10 carbon atoms and in which one or more hydrogen atoms are substituted by the corresponding number of fluorine atoms;

    and wherein halogen atoms are contained in a number accounting for 32 percent or less of the total number of elements constituting said polymer or copolymer;

    said coating having been formed by a process comprising;

    (a) forming a resist layer from said polymer or copolymer on a semiconductor substrate or mask substrate;

    (b) prebaking said resist layer at an elevated temperature;

    (c) irradiating selected portions of said prebaked layer for patterning; and

    (d) removing said selected portions of said resist layer.

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