Method of depositing an abrasive layer

• US 4,260,647 A
• Filed: 06/13/1979
• Issued: 04/07/1981
• Est. Priority Date: 06/13/1979
• Status: Expired due to Term

• Current Assignee: RCA Corporation (General Electric Company)
• Original Assignee: RCA Corporation (General Electric Company)
• Inventors: Wang, Chih C., Bates, Ronald F.
• Primary Examiner(s): Pianalto, Bernard D.
• Application Number:
  US06/048,161
• Time in Patent Office: 664 Days
• Field of Search: 427/39, 427/40, 427/41
• US Class Current: 427/579
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01G 4/145 vapour deposited

Abstract

In a method for the glow discharge deposition of an amorphous, continuous layer from an organosilane and oxygen where the deposition is interrupted, wherein a glow discharge in oxygen is employed prior to resumption of glow discharge layer deposition.

Claims

1. In a method for depositing a thick, amorphous, continuous layer of SiO_x onto a substrate which comprises depositing a series of thin layers by glow discharge of an organosilane and oxygen, interrupting the deposition as required, the improvement which comprises initiating the glow discharge in oxygen after each interruption and prior to a subsequent deposition.

2. In a method for depositing a thick, amorphous, continuous abrasive layer of SiO_x onto a temperature sensitive substrate which comprises depositing a series of thin layers by glow discharge of an organosilane and oxygen, interrupting the deposition as required to maintain the temperature of the substrate below its degradation temperature, the improvement which comprises initiating the glow discharge in oxygen after each interruption and prior to a subsequent deposition.

3. The method of claim 2 wherein the organosilane has the formula ##STR2## wherein R₁ is selected from the group consisting of H and CH₃, R₂ and R₃ are independently selected from the group consisting of H, CH₃, OCH₃ and OC₂ H₅ and R₄ is selected from the group consisting of H and CH₃.

4. The method of claim 3 wherein the organosilane is methyldimethoxysilane.

5. The method of claim 2 wherein the organosilane is tetraethoxysilane.

6. The method of claim 2 wherein the partial pressure of oxygen during the glow discharge in an oxygen atmosphere is from about 20 to about 25 micrometers of mercury.

7. The method of claim 2 wherein the substrate is vinyl.

8. The method of claim 2 wherein the thick SiO_x layer is at least about 1000 angstroms thick.