Method for process control of a plasma reaction

• US 4,263,088 A
• Filed: 06/25/1979
• Issued: 04/21/1981
• Est. Priority Date: 06/25/1979
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Gorin, Georges J.
• Primary Examiner(s): Massie, Jerome W.
• Application Number:
  US06/051,661
• Time in Patent Office: 666 Days
• Field of Search: 156/626, 156/627, 156/643, 156/646, 204/164, 204/192 E, 250/531, 356/72
• US Class Current: 438/9
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector changes indicating that the first portion of the etching process has been completed, the average power density supplied to the reaction is reduced by switching the applied power from a continuous wave to a pulsed mode. The reaction is allowed to continue the completion in the reduced power mode.

Claims

1. A process for controlling a plasma reaction in which RF power is supplied to said reaction, said process comprising the steps of:

monitoring a parameter which changes in relation to the progress of said reaction; and

reducing the average power supplied to said reaction in response to a predetermined change in said parameter by switching said RF power from continuous wave to pulsed.

2. The process of claim 1 wherein the peak power is kept approximately constant.

3. The process of claim 1 wherein said parameter is the voltage output of an optical detector.

4. The process of claim 3 wherein said optical detector is a photoconductive cell.

5. The process of claim 3 wherein said step of reducing the average power is in response to a predetermined decrease in the voltage output of said optical detector.

6. The process of claim 3 wherein said step of reducing the average power is in response to a predetermined slope in the response of the optical detector.

7. A process for controlling a plasma reaction in which RF power is supplied to said reaction, said process comprising the steps of:

monitoring a parameter which changes in relation to the progress of said reaction;

reducing the average power supplied to said reaction in response to a predetermined change in said parameters;

continuing said reaction for a predetermined time after reducing the average power; and

terminating said reaction after said predetermined time.

8. A process for controlling the etching reaction of a first layer of material overlying a second layer having an etch rate substantially different from said first layer by selectively controlling the power supplied to said reaction, the process comprising the steps of:

monitoring the optical emission emanating from said etching reaction, said emission responsive to the etching of said first layer;

detecting a change in said emission, said change indicative that said first layer has been etched through at a first location to expose a portion of said second layer;

reducing the average level of said power supplied to said reaction responsive to said change; and

completing said reaction at said reduced average level of power.