Protective circuit for insulated gate field effect transistor integrated circuits

• US 4,264,941 A
• Filed: 02/14/1979
• Issued: 04/28/1981
• Est. Priority Date: 02/14/1979
• Status: Expired due to Term

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: London, Arnold
• Primary Examiner(s): LARKINS, WILLIAM
• Application Number:
  US06/012,042
• Time in Patent Office: 804 Days
• Field of Search: 361/56, 361/91, 361/111, 357/13, 357/23, 357/35, 357/41, 357/42, 357/43, 307/304, 330/298
• US Class Current: 361/91.5
• CPC Class Codes: H01L 27/0251 for MOS devices

Abstract

A protective circuit for integrated circuits having insulated gate field-effect transistors is disclosed which prevents high potentials resulting from manufacturing, installation, handling, testing or operation from damaging the gate oxide of the field-effect transistors and protective diodes associated with the input of the integrated circuit. The protective circuit includes a first vertical bipolar transistor which has its emitter-to-collector circuit connected in parallel with a first protective diode so that the anode of the diode is connected to the emitter and the input and the cathode of the diode is coupled to the collector and the drain power supply terminal of the field-effect transistors. The inherent distributed resistance of a doped region located within the substrate of the integrated circuit is coupled between the input and the base of the first bipolar transistor. A second lateral bipolar transistor, of an opposite conductivity type than the first bipolar transistor, has its emitter to collector circuit connected in parallel with a series connection of the inherent distributed resistance of the doped region and a second protective diode which is poled in an opposite orientation to the first diode with respect to the input. The cathode of the second diode is connected to the doped region'"'"'s inherent resistance and the anode of the second diode is connected to the source power supply terminal. The inherent distributed resistance of the substrate of the integrated circuit is coupled between the base of the second transistor and the cathode of a low voltage reverse breakdown diode which conducts in the reverse biased direction during conduction of the second transistor. The emitter of the second bipolar transistor is connected to the input and the collector of the transistor is connected to the anode of the low voltage reverse breakdown diode and the source power supply terminal.

The application of a high potential to the integrated circuit which is of sufficient magnitude to rupture the gate oxide of the insulated gated field effect transistors causes conduction of the first or second bipolar transistors before irreversible damage of the protective diodes or the rupture of the gate oxide of the input field effect transistors of the integrated circuit can occur.

Claims

1. A protective circuit for CMOS integrated circuits having a substrate of a first conductivity type, one or more diffusions contained within the substrate which are of conductivity type opposite the substrate in which are formed one or more MOS transistors of the same channel type as the conductivity of the substrate and one or more MOS transistors formed within the substrate of a channel type opposite the conductivity type of the substrate comprising:

(a) an input and an output terminal;

(b) a terminal adapted to be connected to a first operating potential;

(c) a terminal adapted to be connected to a second operating potential;

(d) a first diode having a first and second electrode, the first electrode being coupled to the input terminal and the second electrode being coupled to the terminal which is adapted to be connected to the first operating potential;

(e) a second diode having a first and a second electrode, the first electrode being coupled to the terminal adapted to be connected to the second operating potential and the second terminal being coupled to the input terminal;

(f) a first transistor having a base and an emitter and a collector coupled between the first electrode of the first diode and the second electrode of the first diode, the collector being located in the substrate, the base being a diffusion located within the substrate of a conductivity type opposite the conductivity type of the substrate and the emitter being a diffusion of a conductivity type the same as the substrate which is contained within the base diffusion;

(g) means coupled to the base of the first transistor for biasing the transistor into conduction when a potential is applied between the input and one of the other terminals which is of sufficient magnitude to reverse bias the first diode to a predetermined potential;

(h) a second transistor having a base and an emitter and a collector coupled between the input and the first electrode of the second diode, the emitter being a diffusion of a conductivity type opposite the conductivity type of the substrate, the base being contained within the substrate and the collector being a diffusion of a conductivity type opposite the conductivity type of the substrate; and

(i) means coupled to the base of the second transistor for biasing the transistor into conduction when a potential is applied between the input and one of the other terminals of sufficient magnitude to reverse bias the second diode to a predetermined potential.

2. The protective circuit of claim 1 wherein the collector of the second transistor surrounds the emitter and the base of the second transistor.

3. A protective circuit in accordance with claim 1 wherein:

(a) the means for biasing the first transistor into conduction comprises a first resistance coupled between the input and the base of the first transistor and a third diode having a first electrode coupled to the first resistance and a second electrode coupled to the terminal which is adapted to be connected to the first operating potential, the third diode having a reverse breakdown potential which is less than the reverse breakdown potential of the first diode; and

(b) the means for biasing the second transistor into conduction comprises a second resistance coupled to the base of the second transistor and to a fourth diode having a first electrode coupled to the collector of the second transistor and a second electrode coupled to the base of the second transistor, the fourth diode having a reverse breakdown potential which is less than the reverse breakdown potential of the second diode.

4. The protective circuit of claim 3 wherein the first and second transistors are respectively of opposite conductivity type.

5. The protective circuit of claim 4 wherein the first electrode of the first and third diodes and the second electrode of the second diode is coupled to the input of the CMOS field effect transistor circuit.

6. The protective circuit of claim 5 wherein the first operating potential is p channel source power supply and the second operating potential is the n channel source power supply.

7. The protective circuit of claim 4 further comprising:

(a) substrate of semiconductor material of a first conductivity type;

(b) a first doped region of a second conductivity contained within the substrate, the first and third diodes and the first transistor being fabricated partially within the first region;

(c) means connecting the input to the first region, the third diode being partially disposed within the first region at a point farthest from the part of the first diode disposed within the first region; and

(d) a second doped region of the second conductivity type contained within the substrate, the second and fourth diodes and the second transistor being fabricated partially within the second region, the fourth diode being partially disposed with the second region at a point farthest from the part of the second transistor fabricated within the second region.

8. The protective circuit of claim 7 wherein the first transistor is fabricated vertically within the first region and the substrate and the second transistor is fabricated laterally within the substrate and the second region.

9. The protective circuit of claim 7 wherein:

(a) the first resistance is contained within the first region;

(b) the second resistance is contained within the substrate between the base of the second transistor, the second electrode of the fourth diode, and the second electrode of the first diode.