Low thermal impedance light-emitting diode package
First Claim
1. A light-emitting semiconductor assembly comprising(a) a header;
- (b) a heat coupler composed of material having a room-temperature electrical conductivity greater than 2.0·
104 Ω
-1 ·
cm-1, and a room-temperature thermal conductivity greater than 0.17 watts cm/cm2 ·
°
C., the coupler having at least an external coupling surface adapted to contacting heat-dissipating means, an upper surface, and a lower surface, the header being bonded to the heat coupler at the lower surface;
(c) a light-emitting semiconductor device, having a bonding surface of area not larger than 1/10 of the area of the external coupling surface of the coupler, being bonded at the bonding surface in thermally and electrically conducting relationship to the heat coupler; and
(d) light transmitting means covering the light-emitting device, adapted to transmit light from the device.
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Accused Products
Abstract
Disclosed is an assembly for relatively high power light-emitting semiconductor devices that uses simple inexpensive components and construction to provide a heat coupler that reduces the thermal impedance between the active device and the ambient atmosphere by approximately a factor of ten from that of a comparable assembly not incorporating the inventive heat coupler. The active semiconductor device is directly mounted on the heat coupler. The coupler is fabricated from material having good thermal conductivity, such as copper, copper alloys, or aluminum, and is designed to have a large surface area, at least ten times the area of the bonding surface of the active device, in unobstructed contact with the ambient atmosphere, thereby providing efficient heat coupling between the heat source and the ultimate heat sink.
137 Citations
13 Claims
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1. A light-emitting semiconductor assembly comprising
(a) a header; -
(b) a heat coupler composed of material having a room-temperature electrical conductivity greater than 2.0·
104 Ω
-1 ·
cm-1, and a room-temperature thermal conductivity greater than 0.17 watts cm/cm2 ·
°
C., the coupler having at least an external coupling surface adapted to contacting heat-dissipating means, an upper surface, and a lower surface, the header being bonded to the heat coupler at the lower surface;(c) a light-emitting semiconductor device, having a bonding surface of area not larger than 1/10 of the area of the external coupling surface of the coupler, being bonded at the bonding surface in thermally and electrically conducting relationship to the heat coupler; and (d) light transmitting means covering the light-emitting device, adapted to transmit light from the device. - View Dependent Claims (2, 3, 4, 13)
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5. A light-emitting diode assembly comprising
(a) a header; -
(b) a heat coupler composed of material having a room temperature electrical conductivity greater than 2.0·
104 Ω
-1 ·
cm-1, and a room temperature thermal conductivity greater than 0.17 watts·
cm/cm2 ·
°
C., the coupler having at least an external coupling surface adapted to contacting heat-dissipating means, an upper surface, and a lower surface, the header being bonded to the heat coupler at the lower surface;(c) a light-emitting semiconductor diode, having a bonding surface of area not larger than 1/10 of the area of the external coupling surface of the coupler, the diode being bonded at the bonding surface in electrically and thermally conducting relationship to the heat coupler; and (d) light-transmitting means covering the light-emitting diode, adapted to transmitting light from the light-emitting diode. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A light-emitting semiconductor diode assembly comprising
(a) a TO-18 header; -
(b) a heat coupler comprising a copper alloy, the coupler having substantially cylindrical shape, with an upper and a lower surface, and a peripheral coupling surface, the header being bonded to the coupler at the lower surface of the coupler; (c) a light-emitting semiconductor diode chip, having a bonding surface of area not larger than 1/10 of the area of the peripheral coupling surface of the coupler, the diode being bonded at the bonding surface in electrically and thermally conducting relationship to the upper surface of the heat coupler; (d) an epoxy structure adapted to transmitting light from the diode chip, substantially covering the upper surface of the heat coupler and the diode chip, and having an unconstrained surface; and (e) an epoxy-conformal layer interposed between the epoxy structure and the diode chip.
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Specification