Method and apparatus for gas feed control in a dry etching process

• US 4,270,999 A
• Filed: 09/28/1979
• Issued: 06/02/1981
• Est. Priority Date: 09/28/1979
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Paivanas, John A., Hassan, Javathu K.
• Primary Examiner(s): Gantz, Delbert E.
• Assistant Examiner(s): Leader, William
• Application Number:
  US06/079,759
• Time in Patent Office: 613 Days
• Field of Search: 204/192 E, 204/192 R, 204/298, 156/345, 156/643
• US Class Current: 204/192.32
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A method and apparatus for obtaining a uniform gaseous molecular field under high vacuum conditions encountered in a dry etching process. In the method a source of a gas is provided and introduced into a manifold. The manifold feeds at least one nozzle and the gas is passed through the manifold and through the nozzle into a chamber maintained under vacuum conditions. The pressure of the gas and the configuration of the manifold and nozzle are such that the gas is caused to exit from the nozzle into the chamber under vacuum at sonic velocity.

Claims

1. A method for dry etching in a uniform gaseous molecular field under high vacuum conditions comprising providing a source of a reactant gas, introducing said gas into a manifold, said manifold feeding at least one nozzle, passing said gas through said manifold and through said nozzle into a chamber maintained under vacuum conditions, causing said gas to exit from said nozzle into said chamber under vacuum at sonic velocity within said nozzle, creating plasma from said reactant gas adjacent said objects and etching said objects.

2. A method in accordance with claim 1 wherein said gas is provided to said manifold at a relatively high pressure compared to the pressure of said vacuum chamber.

3. A method in accordance with claim 1 wherein said gas is provided to said manifold at a pressure from about 1 to about 10 psig.

4. A method in accordance with claim 1 wherein said nozzle has a cross sectional area in the range of from about 2×

10^-6 to about 5×

10^-6 in².

5. A method in accordance with claim 1 wherein said nozzle has a length of from about 0.5 to about 1.0 in.

6. A method in accordance with claim 1 wherein the ratio of the nozzle length to the cross sectional area of the nozzle is in the range of from about 0.1×

10⁶ to about 0.5×

10⁶ in^-1.

7. In a plasma type etching apparatus including:

an evacuable chamber;

a support region within said chamber adapted to support at least one object to be etched,

means for generating a radio frequency discharge within said chamber adjacent the object to form a glow discharge plasma from reactant gases introduced into said chamber, and

vacuum means in communication with said chamber;

the improvement comprising gas-vapor feed means within said chamber, located adjacent said object so that gas vapor is introduced within said chamber adjacent said object, said gas feed means being adapted to receive a gas at high pressure and to introduce said gas into said chamber at the vacuum pressure of said chamber whereby said gas is at sonic velocity within said feed means prior to introduction into said chamber thereby creating a highly swirled gas field pattern in the region adjacent said object.

8. Plasma type etching apparatus in accordance with claim 7 wherein said gas-vapor feed means comprises a passage member having at least one groove and a backing member in mating relationship with said passage member to define a gas manifold in fluid communication with a gas nozzle.

9. Plasma type etching apparatus in accordance with claim 7 wherein said nozzle has a cross sectional area in the range of from about 2×

10^-6 to about 5×

10^-6 in².

10. Plasma type etching apparatus in accordance with claim 7 wherein said nozzle has a length of from about 0.5 to about 1.0 in.

11. A plasma type etching apparatus in accordance with claim 7 wherein the ratio of the nozzle length to the cross sectional area of the nozzle is in the range of from about 0.1×

10⁶ to about 0.5×

10⁶ in^-1.

12. A plasma type etching apparatus in accordance with claim 8 wherein said passage member is in the form of a truncated cone.

13. A plasma type etching apparatus in accordance with claim 8 wherein said passage member is in the form of an obliquely truncated cone.