Vacuum deposition system and method
First Claim
1. A system for sputtering material on substrates at extremely low pressures comprising:
- (a) a working chamber comprising a coating chamber section and an isolation chamber section defined by a generally cylindrical pressure wall;
(b) an access chamber adjacent said isolation chamber section;
(c) structure defining pressure gates between said chamber sections and between said access chamber and ambient atmosphere;
(d) roughing vacuum pumping means for evacuating said access chamber to a first, roughing vacuum pressure;
(e) first and second molecular pumping means for evacuating said isolation and coating chamber sections, respectively, said first molecular pumping means effective to evacuate said isolation chamber from a second pressure level substantially less than said roughing vacuum pressure;
(f) a source of gas communicating with said coating chamber section for providing a controlled atmosphere in said coating chamber section; and
,(g) a conveyor system for supporting and moving substrates through said chambers via said gates;
(h) said access chamber formed by pressure wall structure extending closely about substrates conveyed therethrough to minimize the volume of said access chamber and said isolation chamber section defining an internal volume which is no less than about three times larger than said access chamber volume so that when said access and isolation chambers are communicated said isolation chamber effectively further evacuates the access chamber and reduces the pressure in said access chamber substantially to assure said second pressure level in said isolation chamber when said access and isolation chambers are communicated.
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Accused Products
Abstract
A large scale vacuum deposition facility is disclosed in which substrates, in the form of architectural glass lights on supporting racks, are moved through an evacuated working chamber system where the substrates are coated by cathodic sputtering. The substrate racks are moved by a conveyor system through the working chamber system via an access chamber system, enabling substantially continuous production of coated substrates without requiring the working chamber system be opened to atmosphere.
Operation of the working chamber system, the access chamber system, the conveyor system and associated components is monitored and governed from a process control console.
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Citations
17 Claims
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1. A system for sputtering material on substrates at extremely low pressures comprising:
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(a) a working chamber comprising a coating chamber section and an isolation chamber section defined by a generally cylindrical pressure wall; (b) an access chamber adjacent said isolation chamber section; (c) structure defining pressure gates between said chamber sections and between said access chamber and ambient atmosphere; (d) roughing vacuum pumping means for evacuating said access chamber to a first, roughing vacuum pressure; (e) first and second molecular pumping means for evacuating said isolation and coating chamber sections, respectively, said first molecular pumping means effective to evacuate said isolation chamber from a second pressure level substantially less than said roughing vacuum pressure; (f) a source of gas communicating with said coating chamber section for providing a controlled atmosphere in said coating chamber section; and
,(g) a conveyor system for supporting and moving substrates through said chambers via said gates; (h) said access chamber formed by pressure wall structure extending closely about substrates conveyed therethrough to minimize the volume of said access chamber and said isolation chamber section defining an internal volume which is no less than about three times larger than said access chamber volume so that when said access and isolation chambers are communicated said isolation chamber effectively further evacuates the access chamber and reduces the pressure in said access chamber substantially to assure said second pressure level in said isolation chamber when said access and isolation chambers are communicated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A high rate production vacuum deposition facility for large size substrates comprising:
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(a) a relatively large volume working chamber system having an isolation chamber section and a deposition chamber section in which material is deposited on substrates comprising; (i) a substantially cylindrical pressure wall; (ii) at least one end wall structure defining an elongated substrate opening therein; (iii) pressure gate means comprising a door member movable relative to said opening between an open position wherein substrates can pass through said opening and a closed position wherein said opening is sealed closed; (b) a relatively small volume access chamber system extending from said working chamber system end wall, said access chamber system comprising; (i) pressure wall structure defining an access chamber having a generally rectangular elongated cross-sectional shape aligned with said opening, said access chamber pressure wall extending away from said working chamber end wall; (ii) an opening defined by said access chamber remote from said working chamber end wall through which substrates can move between said access chamber and ambient atmosphere; and
,(iii) second pressure gate means for isolating said access chamber volume from the ambient atmosphere comprising a second door member movable between an open position wherein substrates can move through said access chamber opening and a closed position wherein said opening is sealed closed; (c) roughing vacuum pumping means communicating with said access chamber for reducing the pressure in said access chamber volume below ambient atmospheric pressure, said roughing vacuum pumping means efficiently operable through a range of pressures from ambient atmospheric pressure to a first predetermined subatmospheric pressure at which the atmosphere in said access chamber begins to lose the characteristics of fluid flow; and
,(d) working vacuum pumping means communicating with said working chamber for evacuating said working chamber volume, said working vacuum pumping means operable efficiently to evacuate the working chamber from a second predetermined subatmospheric pressure, which is substantially lower than said first predetermined subatmospheric pressure, at least to an optimum working pressure at which the atmosphere exhibits molecular flow characteristics, said working vacuum pumping means being ineffective at said first predetermined subatmospheric pressure; (e) said isolation chamber section disposed between said access chamber and said deposition chamber section with the volume of said isolation chamber section being sufficiently larger than the volume of said access chamber that when said access chamber and said isolation chamber section are communicated by said first pressure gate means with said access chamber at said first predetermined subatmospheric pressure and said isolation chamber section approximately at said working pressure, the resultant pressure within said chambers is at or below said second predetermined subatmospheric pressure and within the efficient operating range of said working vacuum pump means.
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10. A method of depositing material on substrates comprising:
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(a) moving a substrate into a relatively small volume first chamber and mechanically evacuating said first chamber to a first predetermined roughing vacuum pressure level; (b) communicating said first chamber with a second chamber at a second vacuum pressure level substantially lower than the first vacuum pressure level, the second chamber having a volume no less than about three times the volume of said first chamber, (c) expanding the atmosphere in said first chamber to a total of no less than about four times the first chamber volume while communicating said chambers to thereby produce an intermediate vacuum pressure level in said first and second chambers which is substantially less than the first predetermined vacuum pressure level, the atmosphere in said second chamber exhibiting molecular flow characteristics at said intermediate pressure level; (d) advancing the substrate into said second chamber; (e) isolating said first and second chambers; (f) evacuating said second chamber by molecular pumping to said second vacuum pressure level to condition the substrate for coating; (g) providing a deposition chamber and maintaining the pressure in said deposition chamber equal to or greater than said second vacuum pressure level; (h) communicating said second chamber with said deposition chamber; and (i) advancing the substrate into said deposition chamber and depositing material on said substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of depositing material on large area substrates comprising:
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(a) providing a deposition chamber, an isolation chamber and an access chamber which are all isolatable from each other by pressure gates, the isolation chamber defining a substantially larger internal volume than said access chamber; (b) maintaining said deposition chamber at a predetermined deposition pressure at which the atmosphere exhibits molecular flow characteristics; (c) maintaining said isolation chamber at a first pressure level equal to or less than said deposition pressure; (d) conveying a substrate into said access chamber and isolating said access chamber from said isolation chamber and ambient atmosphere; (e) mechanically evacuating said access chamber to a second pressure substantially greater than said deposition pressure and at which the flow of atmosphere from said access chamber begins to lose the characteristics of fluid flow; (f) communicating said access and isolation chambers to expand the access chamber atmosphere into the isolation chamber, the volume of the isolation chamber being sufficiently large to create an atmosphere in the communicated chambers having a pressure which is substantially less than said second pressure and which flows in accordance with principles of molecular flow; (g) conveying said substrate into said isolation chamber and isolating said isolation chamber from said coating and access chambers; (h) evacuating said isolation chamber at least to said deposition pressure level by molecular pumping; (i) communicating said isolation and deposition chambers, conveying said substrate into said deposition chamber and isolating said deposition and isolation chambers; and
,(j) depositing material on the substrate in said deposition chamber.
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Specification