Vacuum deposition system and method

• US 4,274,936 A
• Filed: 04/30/1979
• Issued: 06/23/1981
• Est. Priority Date: 04/30/1979
• Status: Expired due to Term

• Current Assignee: Advanced Coating Technology, Inc.
• Original Assignee: Advanced Coating Technology, Inc.
• Inventors: Love, Robert B.
• Primary Examiner(s): Gantz, Delbert E.
• Assistant Examiner(s): LEADER, WILLIAM T
• Application Number:
  US06/034,347
• Time in Patent Office: 785 Days
• Field of Search: 204/192 R, 204/298, 118/729, 118/719
• US Class Current: 204/192.13
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence

Abstract

A large scale vacuum deposition facility is disclosed in which substrates, in the form of architectural glass lights on supporting racks, are moved through an evacuated working chamber system where the substrates are coated by cathodic sputtering. The substrate racks are moved by a conveyor system through the working chamber system via an access chamber system, enabling substantially continuous production of coated substrates without requiring the working chamber system be opened to atmosphere.

Operation of the working chamber system, the access chamber system, the conveyor system and associated components is monitored and governed from a process control console.

Claims

1. A system for sputtering material on substrates at extremely low pressures comprising:

(a) a working chamber comprising a coating chamber section and an isolation chamber section defined by a generally cylindrical pressure wall;

(b) an access chamber adjacent said isolation chamber section;

(c) structure defining pressure gates between said chamber sections and between said access chamber and ambient atmosphere;

(d) roughing vacuum pumping means for evacuating said access chamber to a first, roughing vacuum pressure;

(e) first and second molecular pumping means for evacuating said isolation and coating chamber sections, respectively, said first molecular pumping means effective to evacuate said isolation chamber from a second pressure level substantially less than said roughing vacuum pressure;

(f) a source of gas communicating with said coating chamber section for providing a controlled atmosphere in said coating chamber section; and

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(g) a conveyor system for supporting and moving substrates through said chambers via said gates;

(h) said access chamber formed by pressure wall structure extending closely about substrates conveyed therethrough to minimize the volume of said access chamber and said isolation chamber section defining an internal volume which is no less than about three times larger than said access chamber volume so that when said access and isolation chambers are communicated said isolation chamber effectively further evacuates the access chamber and reduces the pressure in said access chamber substantially to assure said second pressure level in said isolation chamber when said access and isolation chambers are communicated.

2. The system claimed in claim 1 wherein said roughing vacuum pumping means comprises a reciprocating piston vacuum pump and said first and second molecular pumping means comprise diffusion pumps, said first diffusion pump effective to maintain said isolation chamber pressure below the pressure in said coating chamber section.

3. The system claimed in claim 1 wherein substrates are supported on substrate support racks movable through said chambers by the conveyor system, said coating chamber section being greater than twice the length of said substrate supporting racks to enable coating of substrates with the gate between the isolation and coating chambers closed.

4. The system claimed in claim 1 wherein said working chamber further includes a second isolation chamber section, said system further including an exit chamber adjacent said second isolation chamber section with said conveyor system constructed to move substrates from said coating chamber section to said exit chamber via said second isolation chamber section and a manifold for communicating the roughing vacuum pumping means with said access and exit chambers, and manifold including valve means for isolating said access and exit chambers individually from said manifold.

5. The system claimed in claim 4 wherein said access and exit chambers are of generally rectangular cross-sectional shape and said isolation and coating chamber sections are substantially cylindrical.

6. The system claimed in claim 5 wherein the ratio of the volume of one of said isolation chamber sections to the volume of one of said access or exit chambers is no less than about 3.5 to 1.

7. The system claimed in claim 4 wherein each of said access and exit chambers is associated with a vent valve enabling venting of the respective chambers to atmosphere.

8. The system claimed in claim 4 further including a roughing vacuum pumping means isolating valve for blocking communication between said roughing vacuum pumping means and said manifold.

9. A high rate production vacuum deposition facility for large size substrates comprising:

(a) a relatively large volume working chamber system having an isolation chamber section and a deposition chamber section in which material is deposited on substrates comprising;

(i) a substantially cylindrical pressure wall;

(ii) at least one end wall structure defining an elongated substrate opening therein;

(iii) pressure gate means comprising a door member movable relative to said opening between an open position wherein substrates can pass through said opening and a closed position wherein said opening is sealed closed;

(b) a relatively small volume access chamber system extending from said working chamber system end wall, said access chamber system comprising;

(i) pressure wall structure defining an access chamber having a generally rectangular elongated cross-sectional shape aligned with said opening, said access chamber pressure wall extending away from said working chamber end wall;

(ii) an opening defined by said access chamber remote from said working chamber end wall through which substrates can move between said access chamber and ambient atmosphere; and

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(iii) second pressure gate means for isolating said access chamber volume from the ambient atmosphere comprising a second door member movable between an open position wherein substrates can move through said access chamber opening and a closed position wherein said opening is sealed closed;

(c) roughing vacuum pumping means communicating with said access chamber for reducing the pressure in said access chamber volume below ambient atmospheric pressure, said roughing vacuum pumping means efficiently operable through a range of pressures from ambient atmospheric pressure to a first predetermined subatmospheric pressure at which the atmosphere in said access chamber begins to lose the characteristics of fluid flow; and

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(d) working vacuum pumping means communicating with said working chamber for evacuating said working chamber volume, said working vacuum pumping means operable efficiently to evacuate the working chamber from a second predetermined subatmospheric pressure, which is substantially lower than said first predetermined subatmospheric pressure, at least to an optimum working pressure at which the atmosphere exhibits molecular flow characteristics, said working vacuum pumping means being ineffective at said first predetermined subatmospheric pressure;

(e) said isolation chamber section disposed between said access chamber and said deposition chamber section with the volume of said isolation chamber section being sufficiently larger than the volume of said access chamber that when said access chamber and said isolation chamber section are communicated by said first pressure gate means with said access chamber at said first predetermined subatmospheric pressure and said isolation chamber section approximately at said working pressure, the resultant pressure within said chambers is at or below said second predetermined subatmospheric pressure and within the efficient operating range of said working vacuum pump means.

10. A method of depositing material on substrates comprising:

(a) moving a substrate into a relatively small volume first chamber and mechanically evacuating said first chamber to a first predetermined roughing vacuum pressure level;

(b) communicating said first chamber with a second chamber at a second vacuum pressure level substantially lower than the first vacuum pressure level, the second chamber having a volume no less than about three times the volume of said first chamber,

(c) expanding the atmosphere in said first chamber to a total of no less than about four times the first chamber volume while communicating said chambers to thereby produce an intermediate vacuum pressure level in said first and second chambers which is substantially less than the first predetermined vacuum pressure level, the atmosphere in said second chamber exhibiting molecular flow characteristics at said intermediate pressure level;

(d) advancing the substrate into said second chamber;

(e) isolating said first and second chambers;

(f) evacuating said second chamber by molecular pumping to said second vacuum pressure level to condition the substrate for coating;

(g) providing a deposition chamber and maintaining the pressure in said deposition chamber equal to or greater than said second vacuum pressure level;

(h) communicating said second chamber with said deposition chamber; and

(i) advancing the substrate into said deposition chamber and depositing material on said substrate.

11. The method claimed in claim 10 wherein evacuating said first chamber to a predetermined vacuum pressure level includes pumping atmosphere from said first chamber until the density of the remaining atmosphere is sufficiently low that the flow of atmosphere to the vacuum pump inlet begins to exhibit the characteristics of molecular flow.

12. The method claimed in claim 11 wherein the roughing vacuum pressure in the first chamber is no less than about 500 microns and communicating said first and second chambers reduces the density of the atmosphere in the first and second chambers to no more than about 200 microns.

13. The method claimed in claim 10 wherein the deposition chamber is maintained at a vacuum pressure level which is greater than said second vacuum pressure level when said deposition and second chambers do not communicate and communicating said second chamber with said deposition chamber includes purging the deposition chamber atmosphere.

14. The method claimed in claim 10 further including isolating said deposition chamber from said second chamber after advancing the substrate into the deposition chamber and before depositing material on said substrate.

15. The method claimed in claim 14 further including establishing a chemically controlled atmosphere in said deposition chamber at a vacuum pressure level greater than said second vacuum pressure level after isolating said deposition chamber from said second chamber.

16. The method claimed in claim 10 wherein said first vacuum pressure level is between about 700 and 500 microns and said intermediate vacuum pressure level is between 150 and 200 microns.

17. A method of depositing material on large area substrates comprising:

(a) providing a deposition chamber, an isolation chamber and an access chamber which are all isolatable from each other by pressure gates, the isolation chamber defining a substantially larger internal volume than said access chamber;

(b) maintaining said deposition chamber at a predetermined deposition pressure at which the atmosphere exhibits molecular flow characteristics;

(c) maintaining said isolation chamber at a first pressure level equal to or less than said deposition pressure;

(d) conveying a substrate into said access chamber and isolating said access chamber from said isolation chamber and ambient atmosphere;

(e) mechanically evacuating said access chamber to a second pressure substantially greater than said deposition pressure and at which the flow of atmosphere from said access chamber begins to lose the characteristics of fluid flow;

(f) communicating said access and isolation chambers to expand the access chamber atmosphere into the isolation chamber, the volume of the isolation chamber being sufficiently large to create an atmosphere in the communicated chambers having a pressure which is substantially less than said second pressure and which flows in accordance with principles of molecular flow;

(g) conveying said substrate into said isolation chamber and isolating said isolation chamber from said coating and access chambers;

(h) evacuating said isolation chamber at least to said deposition pressure level by molecular pumping;

(i) communicating said isolation and deposition chambers, conveying said substrate into said deposition chamber and isolating said deposition and isolation chambers; and

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(j) depositing material on the substrate in said deposition chamber.