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Process and mask for ion beam etching of fine patterns

  • US 4,275,286 A
  • Filed: 12/04/1978
  • Issued: 06/23/1981
  • Est. Priority Date: 12/04/1978
  • Status: Expired due to Term
First Claim
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1. A process for ion beam etching in a chosen target fine pre-selected areas having walls substantially perpendicular to the surface of said target, comprising the steps of:

  • (a) providing said target;

    (b) forming a resist mask on the surface of said target and having openings therein which expose said pre-selected areas of said target;

    (c) depositing a selected material which ion beam etches more slowly than said target and which is capable of being deposited at a temperature which is lower than the flowing temperature of said resist, onto said mask at a predetermined controlled angle of incidence with respect to the surface of said resist mask to form a relatively thin protective layer on said resist mask, said predetermined controlled angle of incidence being an acute angle sufficient to deposit said layer with edges and patterns replicated from edges and patterns in said resist mask and with a negligible amount of said selected material deposited on said target; and

    (d) directing a beam of chosen ions at a chosen energy through openings in said protected resist mask to said target to etch said pre-selected areas in said target wherein said thin protective layer prevents or substantially impedes the erosion of said resist mask during said ion beam etching of said target and said pre-selected areas are ion beam etched with said walls substantially perpendicular to said target.

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