Process and mask for ion beam etching of fine patterns

• US 4,275,286 A
• Filed: 12/04/1978
• Issued: 06/23/1981
• Est. Priority Date: 12/04/1978
• Status: Expired due to Term

• Current Assignee: Hughes Electronics Corporation (AT&T, Inc.)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Hackett, Le Roy H. Jr.
• Primary Examiner(s): Albritton, C. L.
• Assistant Examiner(s): Borchelt, E. F.
• Application Number:
  US05/965,964
• Time in Patent Office: 932 Days
• Field of Search: 219/121 EM, 219/121 LM, 219/121 EB, 219/121 L, 219/121 EJ, 219/121 EK, 219/121 EE, 219/121 ER, 219/121 LH, 219/121 LJ, 219/121 LP, 204/192 N, 204/192 E, 204/192 EC, 156/643, 427/35, 427/88, 427/91, 427/99
• US Class Current: 219/121.2
• CPC Class Codes: B23K 17/00 Use of the energy of nuclear particles in welding or related techniques
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/0272 for lift-off processes
• CPC Class Codes: H01L 21/2633 for etching, e.g. sputteretching
• CPC Class Codes: Y10S 438/951 Lift-off

Abstract

The specification describes a process for ion beam etching fine patterns in a substrate using a protected resist mask which prevents erosion of the mask. First, a resist pattern is formed on the surface of a substrate to expose pre-selected areas of the substrate. Next, a selected material is deposited on the resist mask at a predetermined controlled angle of incidence with respect to the surface of the mask to form a relatively thin protective layer on the resist mask, having edges and patterns replicated from the edges and patterns of the resist mask and a negligible amount of the selected material deposited on the exposed substrate. Then, a beam of ions at a chosen energy is directed through openings in the protected mask to the substrate to etch the pre-selected areas. During etching, the protective layer on the resist prevents erosion of the resist mask and provides improved pattern definition for the etched region. In a preferred embodiment, metal contacts to the etched regions are subsequently formed by depositing a selected metal from a directional source and then lifting off the resist and the undesired metal.

Claims

1. A process for ion beam etching in a chosen target fine pre-selected areas having walls substantially perpendicular to the surface of said target, comprising the steps of:

(a) providing said target;

(b) forming a resist mask on the surface of said target and having openings therein which expose said pre-selected areas of said target;

(c) depositing a selected material which ion beam etches more slowly than said target and which is capable of being deposited at a temperature which is lower than the flowing temperature of said resist, onto said mask at a predetermined controlled angle of incidence with respect to the surface of said resist mask to form a relatively thin protective layer on said resist mask, said predetermined controlled angle of incidence being an acute angle sufficient to deposit said layer with edges and patterns replicated from edges and patterns in said resist mask and with a negligible amount of said selected material deposited on said target; and

(d) directing a beam of chosen ions at a chosen energy through openings in said protected resist mask to said target to etch said pre-selected areas in said target wherein said thin protective layer prevents or substantially impedes the erosion of said resist mask during said ion beam etching of said target and said pre-selected areas are ion beam etched with said walls substantially perpendicular to said target.

2. A process as set forth in claim 1 wherein said target is chosen from the group consisting of a substrate and a substrate having a chosen layer deposited thereon.

3. A process as set forth in claim 1 wherein said selected material is chosen from the group consisting of aluminum, magnesium, chromium, and titanium.

4. A process as set forth in claim 1 wherein said chosen ions are selected from the group consisting of argon, neon, krypton, and xenon.

5. A process as set forth in claim 1 wherein said fine pre-selected areas are etched to a depth of between 10A and 10,000A.

6. A process as set forth in claim 1 wherein:

(a) said target is a gallium arsenide substrate;

(b) said resist is polymethylmethacrylate and is deposited to a thickness of 5000A;

(c) said selected material is aluminum and is deposited to a thickness of 500A;

(d) said chosen ions are argon ions at 0.5 Kev energy and are applied for 6.5 minutes; and

(e) said etching of said target is performed to a depth of 800A.

7. In a process for ion beam etching selected areas in a target which comprises providing said target, forming a patterned resist mask on the surface of said target to expose said selected areas in said target, and directing a beam of chosen ions through openings in said resist mask to said target, the improvement comprising evaporating a selected material which ion beam etches more slowly than said target and at a temperature which is lower than the flowing temperature of said resist, onto said resist mask at a predetermined controlled angle of incidence with respect to the surface of said resist mask to form a relatively thin protective layer on said resist mask, said predetermined controlled angle of incidence being an acute angle sufficient to deposit said layer with edges and patterns replicated from edges and patterns in said resist mask and with a negligible amount of said selected material deposited on said target wherein said protective layer prevents or substantially impedes the erosion of said resist mask during said ion beam etching of said target and said selected areas are formed by said ion beam etching to have walls substantially perpendicular to said surface of said target.

8. A process for ion beam etching fine pre-selected areas in a chosen target and forming metal contacts to said areas comprising the steps of:

(a) providing said target;

(b) forming a resist mask on the surface of said target and having openings therein which expose said pre-selected areas of said target;

(c) depositing a selected material which ion beam etches more slowly than said target and which is capable of being deposited at a temperature which is lower than the flowing temperature of said resist, onto said mask at a predetermined controlled angle of incidence with respect to the surface of said resist mask to form a relatively thin protective layer on said resist mask, said predetermined controlled angle of incidence being an actue angle sufficient to deposit said layer with edges and patterns replicated from edges and patterns in said resist mask and with a negligible amount of said selected material deposited on said target;

(d) directing a beam of chosen ions at a chosen energy through openings in said protected resist mask to said target to etch said pre-selected areas in said target wherein said thin protective layer prevents or substantially impedes the erosion of said resist mask during said ion beam etching of said target and said pre-selected areas are ion beam etched to have walls substantially perpendicular to said surface of said target;

(e) depositing a selected metal from a directional source normal to the surface of said protected resist mask and into contact with said etched preselected areas in said target; and

(f) applying a selected solvent to dissolve said resist away from the surface of said target and to thereby remove the portion of said metal adhering to said resist.

9. A process as set forth in claim 8 wherein:

(a) said target is a gallium arsenide substrate;

(b) said resist is polymethylmethacrylate and is deposited to a thickness of 5000A;

(c) said selected material is aluminum and is deposited to a thickness of 500A;

(d) said chosen ions are argon ions at 0.5 Kev energy and are applied for 6.5 minutes;

(e) said etching of said target is performed to a depth of 800A; and

(f) said selected metal is aluminum and is deposited to a thickness of 2500A. PG,28

10. A process for making a protected ion beam etching mask which includes:

(a) providing a resist mask on the surface of a chosen substrate and having openings therein which expose pre-selected areas on said substrate to be ion beam etched; and

(b) depositing a selected material onto said resist mask at a predetermined controlled angle of incidence with respect to the surface of said resist mask to thereby form a thin protective layer on said resist mask, said predetermined controlled angle of incidence being an acute angle sufficient to deposit said layer with edges and patterns replicated from edges and patterns in said resist mask, wherebya negligible amount of said selected material reaches said substrate and said thin protective layer prevents or substantially impedes any erosion of said resist mask during the ion beam etching of said substrate.

11. The process defined in claim 10 where said depositing a selected material includes projecting aluminum onto said resist mask from a point source and at a chosen angle of incidence with respect to said surface of said resist mask of between 2°

and 20°

to thereby form a thin aluminum film on said resist mask of the order of 500A or greater, and said chosen angle being determined, in part, by the width of said openings in said resist mask.