Thermistor

• US 4,276,535 A
• Filed: 02/27/1980
• Issued: 06/30/1981
• Est. Priority Date: 08/23/1977
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Hayakawa, Shigeru, Wasa, Kiyotaka, Mitsuyu, Tsuneo
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US06/125,231
• Time in Patent Office: 489 Days
• Field of Search: 338/22 R, 338/225 D, 338/308, 338/309, 29/612, 204/192 F, 204/192 S, 204/192 SP, 427/101-103
• US Class Current: 338/22.00R
• CPC Class Codes: H01C 7/041 formed as one or more layers or coatings
• CPC Class Codes: H01C 7/048 Carbon or carbides

Abstract

A high performance, precision thermistor comprising a temperature sensitive resistor in the form of a thin, uniform layer of silicon carbide, deposited on a base support by sputtering, and electrode means attached to the temperature sensitive resistor in electrically connected relation to the temperature sensitive resistor.

Claims

1. A thermistor comprising a base support, a temperature sensitive resistance layer of silicon carbide applied by sputtering deposition on one surface of said base support, and electrode means electrically connected to said temperature sensitive resistance layer of silicon carbide.

2. A thermistor as claimed in claim 1, wherein said base support is made of electrically insulating material.

3. A thermistor as claimed in claim 1, further comprising a layer of electrically insulating material positioned between the temperature sensitive resistance layer and the base support.

4. A thermistor as claimed in claim 3, wherein said base support is made of electrically conductive material.

5. A thermistor as claimed in claim 4, wherein said electrically conductive material is a metal.

6. A thermistor as claimed in claim 4, wherein said electrically conductive material is a semiconductor.

7. A thermistor as claimed in claim 1, wherein said electrode means is constituted by first and second electrodes.

8. A thermistor as claimed in claim 7, wherein said first and second electrodes are positioned between the base support and the temperature sensitive resistance layer.

9. A thermistor as claimed in claim 7, wherein said first and second electrodes are positioned on an outer surface of the temperature sensitive resistance layer remote from the base support.

10. A thermistor as claimed in claim 1, wherein said electrode means is constituted by one electrode positioned on an outer surface of the temperature sensitive resistance layer remote from the base support, and wherein said base support is made of an electrically conductive material and concurrently serves as a counter electrode cooperative with said electrode on the outer surface of the temperature sensitive resistance layer.

11. A thermistor as claimed in claim 6, wherein said semiconductor is silicon.

12. A thermistor as claimed in claim 3, wherein said base support is made of electrically conductive material and wherein said electrically insulating layer is made of a material selected from the group consisting of silicon oxides and silicon nitrides.

13. A thermistor as claimed in claim 1 wherein said silicon carbide layer has a thickness within the range of from 1-10 μ

m.

14. A thermistor as claimed in claim 1, said sputtering deposition is conducted by an rf-sputtering of silicon carbide target wherein a temperature of said base support is kept 600°

to 700°

C., a deposition rate of said temperature sensitive resistance layer of silicon carbide is ranged from 0.1 to 10 μ

m/hr, and a sputtering gas pressure is ranged from 1×

10^-1 to 1×

10^-1 Torr of argon.