Photodiode having enhanced long wavelength response

• US 4,277,793 A
• Filed: 07/16/1979
• Issued: 07/07/1981
• Est. Priority Date: 07/16/1979
• Status: Expired due to Term

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Webb, Paul P.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US06/058,026
• Time in Patent Office: 722 Days
• Field of Search: 357/30, 357/13, 357/55, 357/58
• US Class Current: 257/436
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0236 Special surface textures
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

The light entry surface or back surface of an avalanche or p-i-n photodiode is contoured in a regular array of indentations which are hemispherical or almost hemispherical in shape. Light incident on the photodiode undergoes multiple interactions with the contoured surface, thus reducing the entry surface reflectivity and increasing the optical path length in the photodiode, and thereby enhancing its long wavelength response.

Claims

1. In a photodiode which comprises:

a semiconductor body having two opposed surfaces;

a first conducting region of a first conductivity type extending a distance into said body from a first surface of said body;

a second conducting region of a second conductivity type extending into said body from a second surface of said body, such that said regions of first and second conductivity type do not overlap;

first and second electrically conducting layers overlying portions of said first and second conducting regions, respectively, whereby electrical contact is made to said first and second conducting regions;

the improvement which comprises a portion of the surface of said first conducting region being contoured in the form of a regular array of almost hemispherically shaped indentations extending a distance into said body, wherein sharp points in the indented surface are directed away from the interior of the body, thereby minimizing the formation of local regions of high electric field in the interior of the body.

2. A photodiode according to claim 1 wherein a third region of a conductivity type opposite to that of said region of the second conductivity type is interposed between said region of the second conductivity type and said body and is contiguous with said region of the second conductivity type, whereby a p-n junction is formed between said region of the second conductivity type and said third region.

3. A photodiode according to claim 2 wherein said semiconductor body is lightly p-type conducting, said region of the first conductivity type and said third region are p-type conducting and said region of the second type conductivity is n-type conducting.

4. A photodiode according to claim 1 wherein said semiconductor body is lightly p-type conducting, said region of the first conductivity type is n-type conducting and said region of the second conductivity type is p-type conducting.

5. A photodiode according to claim 1 wherein the diameter of said indentations on said surface is from about 3 microns to about 100 microns.

6. A photodiode according to claim 5 wherein the diameter of said indentations on said surface is from about 25 microns to about 75 microns.

7. A photodiode according to claim 1 wherein the depth of said indentations is from about 2 microns to about 50 microns.

8. A photodiode according to claim 7 wherein the depth of said indentations is from about 12 to about 35 microns.

9. A photodiode according to claim 1 wherein said indentations overlap one another along the direction of closest spacing.