Monolithic integrated circuit structure incorporating Schottky contact diode bridge rectifier

• US 4,278,985 A
• Filed: 04/14/1980
• Issued: 07/14/1981
• Est. Priority Date: 04/14/1980
• Status: Expired due to Term

• Current Assignee: GTE Laboratories Incorporated (Lumen Technologies, Inc.)
• Original Assignee: GTE Laboratories Incorporated (Lumen Technologies, Inc.)
• Inventors: Stobbs, William
• Primary Examiner(s): CLAWSON JR, JOSEPH
• Application Number:
  US06/140,038
• Time in Patent Office: 456 Days
• Field of Search: 357/15, 357/76, 357/45, 357/40
• US Class Current: 257/477
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 27/0814 Diodes only
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 257/909 Macrocell arrays, e.g. gate arrays with variable size or configuration of cells

Abstract

Monolithic integrated circuit structure incorporating a full wave diode bridge rectifier of four Schottky diodes. A body of silicon includes four zones of N-type material. The first and second N-type zones are separated from each other by encircling and intervening P-type material. A third and fourth N-type zones are contiguous. A Schottky barrier is formed adjacent to the surface of each zone by a layer of a mixed silicide of deposited titanium and tungsten. A first conductive member is connected to the N-type material of the first zone and the silicide layer of the third zone. A second conductive member is connected to the N-type material of the second zone and the silicide layer of the fourth zone. A third conductive member is connected in common to the silicide layers on the first and second zones. A fourth conductive member is connected to the N-type material of the third and fourth zones. An AC voltage applied across the first and second conductive members produces a DC voltage across the third and fourth conductive members.

Claims

1. Monolithic integrated circuit structure incorporating a metal-semiconductor rectifying barrier diode bridge comprising

a body of semiconductor material;

a first sector of said body electrically isolated from the remainder of the body by intervening semiconductor material of one conductivity type;

said first sector including

a first zone of semiconductor material of the opposite conductivity type,

a second zone of semiconductor material of the opposite conductivity type,

said first and second zones being separated from each other by an intervening barrier of semiconductor material of the one conductivity type;

a first layer of metal-semiconductor rectifying barrier forming metal in contact with said first zone forming a rectifying barrier therebetween;

a second layer of metal-semiconductor rectifying barrier forming metal in contact with said second zone forming a rectifying barrier therebetween;

a second sector of said body electrically isolated from the remainder of the body by intervening semiconductor material of the one conductivity type;

said second sector including

a third zone of semiconductor material of the opposite conductivity type, and

a fourth zone of semiconductor material of the opposite conductivity type;

a third layer of metal-semiconductor rectifying barrier forming metal in contact with said third zone forming a rectifying barrier therebetween;

a fourth layer of metal-semiconductor rectifying barrier forming metal in contact with said fourth zone forming a rectifying barrier therebetween;

first connection means in ohmic contact with the first zone of semiconductor material and connected to said third layer of metal;

second connection means in ohmic contact with the second zone of semiconductor material and connected to said fourth layer of metal;

third connection means connected to said first and second layers of metal; and

fourth connection means in ohmic contact with the third and fourth zones of semiconductor material;

whereby a bridge rectifier of four metal-semiconductor rectifying barrier diodes is provided, which in response to an AC voltage across the first and second connection means produces a DC voltage across the third and fourth connection means.

2. Monolithic integrated circuit structure in accordance with claim 1 wherein

said third and fourth zones of semiconductor material of the opposite conductivity type are contiguous forming a section of the opposite conductivity type;

and

said fourth connection means is in ohmic contact with said section.

3. Monolithic integrated circuit structure in accordance with claim 2 wherein

the first and second layers of metal-semiconductor barrier forming metal are a single continuous layer of metal in contact with the first and second zones and forming rectifying barriers between the layer of metal and the first zone and between the layer of metal and the second zone.

4. Monolithic integrated circuit structure in accordance with claim 3 wherein

each layer of metal-semiconductor barrier forming metal and the semiconductor material it contacts forms a Schottky barrier diode.

5. Monolithic integrated circuit structure in accordance with claim 4 wherein

the semiconductor material is silicon;

and

the metal-semiconductor rectifying barrier forming metal of said layers is a mixed silicide of tungsten and titanium.

6. Monolithic integrated circuit structure in accordance with claim 5 wherein

titanium is about 5% of the combined weight of titanium and tungsten.

7. Monolithic integrated circuit structure in accordance with claim 3 or 5 wherein

the one conductivity type is P-type;

and

the opposite conductivity type is N-type.

8. Monolithic integrated circuit structure incorporating a metal-semiconductor rectifying barrier diode bridge comprising

a substrate of semiconductor material of one conductivity type;

a layer of semiconductor material of the opposite conductivity type contiguous the substrate and having a flat planar surface;

an isolation barrier of the one conductivity type extending through the layer from the surface to the substrate to form an electrically isolated first sector;

a first zone of semiconductor material of the opposite conductivity type within the first sector having a surface area in the surface of the layer;

a second zone of semiconductor material of the opposite conductivity type within the first sector having a surface area in the surface of the layer;

an isolation barrier of the one conductivity type extending through the layer from the surface to the substrate between the first and second zones to separate the first and second zones from each other;

a first layer of metal-semiconductor rectifying barrier forming metal in contact with a portion of the surface area of the first zone forming a rectifying barrier therebetween;

a second layer of metal-semiconductor rectifying barrier forming metal in contact with a portion of the surface area of the second zone forming a rectifying barrier therebetween;

an isolation barrier of the one conductivity type extending through the layer from the surface to the substrate to form an electrically isolated second sector;

a third zone of semiconductor material of the opposite conductivity type within the second sector having a surface area in the surface of the layer;

a fourth zone of semiconductor material of the opposite conductivity type within the second sector having a surface area in the surface of the layer;

a third layer of metal-semiconductor rectifying barrier forming metal in contact with a portion of the surface area of the third zone forming a rectifying barrier therebetween;

a fourth layer of metal-semiconductor rectifying barrier forming metal in contact with a portion of the surface area of the fourth zone forming a rectifying barrier therebetween;

first connection means in ohmic contact with the first zone of semiconductor material and connected to said third layer of metal;

second connection means in ohmic contact with the second zone of semiconductor material and connected to said fourth layer of metal;

third connection means connected to said first and second layers of metal; and

fourth connection means in ohmic contact with the third and fourth zones of semiconductor material;

whereby a bridge rectifier of four metal-semiconductor rectifying barrier diodes is provided, which in response to an AC voltage across the first and second connection means produces a DC voltage across the third and fourth connection means.

9. Monolithic integrated circuit structure in accordance with claim 8 wherein

said third and fourth zones of semiconductor material of the opposite conductivity type are contiguous forming a section of the opposite conductivity type;

and

said fourth connection means is in ohmic contact with said section.

10. Monolithic integrated circuit structure in accordance with claim 9 including

a first ring of semiconductor material of the one conductivity type inset in the first zone encircling said portion of the surface area of the first zone;

a second ring of semiconductor material of the one conductivity type inset in the second zone encircling said portion of the surface area of the second zone;

said first and second layers of metal-semiconductor barrier forming metal being a single continuous layer of metal in contact with the surface of the layer of semiconductor material at said portions of the surface areas of the first zone and the second zone and forming rectifying barriers between the layer of metal and said portion of the surface area of the first zone and between the layer of metal and said portion of the surface area of the second zone;

a third ring of semiconductor material of the one conductivity type inset in the third zone encircling said portion of the surface area of the third zone; and

a fourth ring of semiconductor material of the one conductivity type inset in the fourth zone encircling said portion of the surface area of the fourth zone.

11. Monolithic integrated circuit structure in accordance with claim 10 wherein

said section of semiconductor material of the opposite conductivity type in the second sector includes

a first region of semiconductor material of the opposite conductivity type of moderate resistivity having a surface area encircled by said third ring of semiconductor material of the one conductivity type;

a second region of semiconductor material of the opposite conductivity type of moderate resistivity having a surface area encircled by said fourth ring of semiconductor material of the one conductivity type;

a buried region of semiconductor material of the opposite conductivity type of low resistivity underlying said first and second regions of moderate resistivity;

contact regions of semiconductor material of the opposite conductivity type of low resistivity extending from areas of the surface outside of said third and fourth rings to said buried region to form contiguous regions of semiconductor material of the opposite conductivity type of low resistivity surrounding said first and said second regions of moderate resistivity;

said fourth connection means making ohmic connection to said contact regions at the surface.

12. Monolithic integrated circuit structure in accordance with claim 11 including

an adherent nonconductive coating on said surface;

a first opening in said coating exposing said portions of the surface areas of the first and second zones and portions of the surface areas of the first and second rings at the interfaces of the first and second rings and the first and second zones, respectively;

metal-semiconductor rectifying barrier forming metal overlying the surface exposed by the first opening;

a second opening in said coating exposing said portion of the surface area of the third zone and a portion of the surface area of the third ring at the interface of the third ring and the third zone;

metal-semiconductor rectifying barrier forming metal overlying the surface exposed by the second opening;

a third opening in said coating exposing said portion of the surface area of the fourth zone and a portion of the surface area of the fourth ring at the interface of the fourth ring and the fourth zone;

metal-semiconductor rectifying barrier forming metal overlying the surface exposed by the third opening;

a fourth opening in said coating exposing an area of the surface of the first zone outside of said first ring;

conductive material overlying the surface exposed by the fourth opening and making ohmic contact thereto;

a fifth opening in said coating exposing an area of the surface of the second zone outside of said second ring;

conductive material overlying the surface exposed by the fifth opening and making ohmic contact thereto;

a sixth opening in said coating exposing portions of the surface areas of said contact regions; and

conductive material overlying the surface exposed by the sixth opening and making ohmic contact thereto.

13. Monolithic integrated circuit structure in accordance with claim 12 wherein

each layer of metal-semiconductor rectifying barrier forming metal and the semiconductor material it contacts form a Schottky barrier diode.

14. Monolithic integrated circuit structure in accordance with claim 13 including

a first conductive bus adherent to said coating and making electrical connection to the conductive material in the fourth opening and to the metal-semiconductor rectifying barrier forming metal in the second opening;

a second conductive bus adherent to said coating and making electrical connection to the conductive material in the fifth opening and to the metal-semiconductor rectifying barrier forming metal in the third opening;

a third conductive bus adherent to said coating and making electrical connection to the metal-semiconductor rectifying barrier forming metal in the first opening; and

a fourth conductive bus adherent to said coating and making electrical connection to the conductive material in the sixth opening.

15. Monolithic integrated circuit structure in accordance with claim 14 wherein

the semiconductor material in silicon;

the one conductivity type is P-type;

the opposite conductivity type is N-type; and

the metal-semiconductor rectifying barrier forming metal is a mixed silicide of tungsten and titanium.