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High-radiance emitters with integral microlens

  • US 4,279,690 A
  • Filed: 09/19/1977
  • Issued: 07/21/1981
  • Est. Priority Date: 10/28/1975
  • Status: Expired due to Term
First Claim
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1. A process for making a radiation emitting semiconductor device comprising the steps of depositing an oxide on one side of an emitting device structure having an emitting junction, selectively removing an annular region of the oxide, selectively etching the exposed annular portion of the device structure to form a mesa type structure, selectively removing the oxide over the mesa structure and then selectively etching further to round the top of the mesa structure.

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