Method and apparatus for monitoring etching

• US 4,289,188 A
• Filed: 05/19/1980
• Issued: 09/15/1981
• Est. Priority Date: 05/28/1979
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Komatsu, Hideo, Mizutani, Tatsumi, Iida, Shinya, Ueki, Kazuyoshi
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/150,939
• Time in Patent Office: 484 Days
• Field of Search: 156/626, 156/643, 156/646, 156/657, 156/662, 156/627, 156/345, 156/665, 252/79.1, 204/192 E, 204/298, 250/531, 356/412, 356/414, 356/416, 356/425, 356/437
• US Class Current: 216/60
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/02019 Chemical etching
• CPC Class Codes: H01L 21/32136 using plasmas

Abstract

Method and apparatus for monitoring a dry etching process using gas plasma, wherein a ratio of a spectrum intensity which varies depending on the process of the etching process to a spectrum intensity which is independent of the process of the etching process is determined and a resulting signal intensity is monitored. The completion of the etching process can be exactly determined irrespective of variation of the etching conditions.

Claims

1. A method for monitoring etching process for etching a workpiece by ions or radical sproduced by glow display plasma, comprising the steps of:

correcting a specific spectrum intensity, which is dependent on the process of said etching process, of atoms or molecules produced in said plasma by another spectrum intensity which is independent of the process of said etching process; and

monitoring a resulting signal intensity.

2. A method according to claim 1, wherein said spectrum intensity dependent on the process of said etching process and said spectrum intensity independent of the process of said etching process are an emission spectrum intensity at a specific wavelength and an emission spectrum intensity at another wavelength, respectively.

3. A method according to claim 1, wherein said spectrum intensity dependent on the process of said etching process and said spectrum intensity independent of the process of said etching process are a mass spectrum intensity of a specific mass number and a mass spectrum intensity of another mass number, respectively.

4. A method according to claim 2, wherein said spectrum intensity dependent on the process of said etching process is a plasma emission spectrum intensity at a specific wavelength selected through an optical filter or a diffraction grating, and said spectrum intensity independent of the process of said etching process is a plasma emission spectrum intensity at another wavelength selected through an optical filter or a diffraction grating.

5. A method according to claim 1, 2, 3 or 4, wherein a ratio of said spectrum intensity dependent on the process of said etching process to said spectrum intensity independent of the process of said etching process is monitored.

6. A method according to claim 5, wherein a ratio of a spectrum intensity of Al atoms or AlCl molecules to a spectrum intensity of Cl atoms is monitored, said Al atoms or AlCl molecules and Cl atoms being produced in the course of etching Al or Al-based alloy using plasma of compound gas including chlorine atoms.

7. An apparatus for monitoring etching process for etching a workpiece by ions or radicals produced by glow discharge plasma, comprising:

means for measuring a specific spectrum intensity, which is dependent on the process of said etching process, of atoms or molecules produced in said plasma;

means for measuring a spectrum intensity independent of the process of said etching process; and

means for producing a corrected spectrum intensity, said corrected spectrum intensity being generated by correcting said spectrum intensity dependent on the process of said etching process by said spectrum intensity independent of the process of said etching process.

8. An apparatus according to claim 7, wherein said spectrum intensity dependent on the process of said etching process and said spectrum intensity independent of the process of said etching process are an emission spectrum at a specific wavelength and an emission spectrum at another wavelength, respectively.

9. An apparatus according to claim 7, wherein said spectrum intensity dependent on the process of said etching process and said spectrum intensity independent of the process of said etching process are a mass spectrum of a specific mass number and a mass spectrum of another mass number, respectively.

10. An apparatus according to claim 8, wherein said means for measuring the spectrum intensity dependent on the process of said etching process includes an optical filter or diffraction grating for selecting the emission spectrum of said specific wavelength and means for measuring the selected spectrum intensity, and said means for measuring the spectrum intensity independent of the process of said etching process includes an optical filter or diffraction grating for selecting the emission spectrum of said another wavelength and means for measuring the selected spectrum intensity.

11. An apparatus according to claim 7, 8, 9 or 10, wherein said means for producing the corrected spectrum intensity includes means for calculating a ratio of said spectrum intensity dependent on the process of said etching process to said spectrum intensity independent of the process of said etching process.

12. An apparatus according to claim 11, including means for measuring a spectrum intensity of Al atoms or AlCl molecules and means for measuring a spectrum intensity of Cl atoms, said Al atoms or AlCl molecules and said Cl atoms being produced in the course of etching Al or Al-based alloy using plasma of compound gas including chlorine atoms, and means for calculating a ratio of said two spectrum intensities.