Method for crystal growth control

• US 4,290,835 A
• Filed: 06/19/1980
• Issued: 09/22/1981
• Est. Priority Date: 06/14/1978
• Status: Expired due to Term

• Current Assignee: ASE Americas Incorporated (Carl-Zeiss-Stiftung)
• Original Assignee: Mobil Tyco Solar Energy Corporation (Carl-Zeiss-Stiftung)
• Inventors: Yates, Douglas A., Goldsmith, Jeff M., Hatch, Arthur E.
• Primary Examiner(s): BERNSTEIN, HIRAM H
• Application Number:
  US06/161,037
• Time in Patent Office: 460 Days
• Field of Search: 422/110, 422/105, 422/249, 156/617 SP, 156/601, 356/445, 356/448, 364/472, 364/500
• US Class Current: 117/16
• CPC Class Codes: C30B 15/26 using television detectors; using photo or X-ray detectors
• CPC Class Codes: C30B 15/34 Edge-defined film-fed crystal-growth using dies or slits

Abstract

The growth of a crystalline body of a selected material is controlled so that the body has a selected cross-sectional shape. The apparatus is of the type which includes the structure normally employed in known capillary die devices as well as means for observing at least the portion of the surfaces of the growing crystalline body and the meniscus (of melt material from which the body is being pulled) including the solid/liquid/vapor junction in a direction substantially perpendicular to the meniscus surface formed at the junction when the growth of the crystalline body is under steady state conditions. The cross-sectional size of the growing crystalline body can be controlled by determining which points exhibit a sharp change in the amount of reflected radiation of a preselected wavelength and controlling the speed at which the body is being pulled or the temperature of the growth pool of melt so as to maintain those points exhibiting a sharp change at a preselected spatial position relative to a predetermined reference position. The improvement comprises reference object means positioned near the solid/liquid/vapor junction and capable of being observed by the means for observing so as to define said reference position so that the problems associated with convection current jitter are overcome.

Claims

1. A method of growing a crystalline body of selected material from a growth pool of melt so that said body has a selected cross-sectional shape for some preselected distance along its length, said growth pool being characterized by a meniscus which joins said body at said growth pool said method comprising:

positioning reference object means adjacent the junction where said meniscus meets said body;

observing said body, said reference object means and said meniscus along an optical axis which is substantially perpendicular to the surface of said meniscus where said meniscus meets said body and in which the reference object means appears spaced from the junction with a portion of said meniscus or said body spaced therebetween;

determining a first spatial position where a sharp contrast occurs between said body, and said meniscus and a second spatial position where a sharp contrast occurs between said portion of meniscus or body and said reference object means;

referencing said first spatial position relative to said second spatial position; and

controlling the speed at which said body is pulled from said growth pool or the temperature of said growth pool so that said first spatial position can be controlled relative to said second spatial position.

2. A method in accordance with claim 1, wherein said material is silicon and said optical axis is approximately 11°

with respect to the horizontal.

3. A method in accordance with claim 1, wherein said material is germanium and said optical axis is approximately 8°

with respect to the horizontal.