Semiconductor absolute pressure transducer assembly and method

• US 4,291,293 A
• Filed: 09/19/1979
• Issued: 09/22/1981
• Est. Priority Date: 09/27/1978
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Takahashi, Minoru, Sato, Hideo, Kawakami, Kanji, Suzuki, Seiko, Nishihara, Motohisa, Minorikawa, Hitoshi, Kanzawa, Ryosaku, Yamada, Kazuji, Kobori, Shigeyuki
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US06/076,813
• Time in Patent Office: 734 Days
• Field of Search: 338/2-5, 338/42, 73/720, 73/721, 73/726, 73/727, 357/26, 29/610 SG
• US Class Current: 338/4
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.

Claims

1. A semiconductor pressure transducer assembly comprising:

a silicon diaphragam assembly having a thin pressure sensitive diaphragm portion and a thick supporting portion surrounding the pressure sensitive diaphragm portion;

piezoresistive elements constructed on the pressure sensitive diaphragm portion of said silicon diaphragm assembly, the resistance values of the piezoresistive elements varying depending on the strain appearing in the diaphragm portion in response to pressure applied thereto;

conducting paths constructed on said silicon diaphragm assembly for electrically connecting of said piezoresistive elements;

a passivating layer of insulating material covering a surface of said silicon diaphragm assembly on which said piezoresistive elements and said conducting paths are constructed;

a layer of conductive material formed on a surface of said passivating layer; and

a covering member of insulating material mounted and bonded onto said silicon diaphragm assembly in contact with said conductive material layer on said passivating layer using Anodic Bonding method, wherein said piezoresistive elements and said conducting paths are constructed on said silicon diaphragm assembly using Ion Implantation method.

2. A semiconductor pressure transducer assembly as claimed in claim 1, wherein a photoresist formed on the surface of said silicon diaphragm assembly is used as mask means in the Ion Implantation method.

6. A semiconductor pressure transducer assembly as claimed in claim 1, 3 or 4, wherein in said passivating layer are formed a contacting window, and said layer of conductive material covers said contacting window, therefore, said silicon diaphragm assembly and said conductive material layer electrically connecting to each other.

7. A semiconductor pressure transducer assembly as claimed in claim 1, 3 or 4, wherein said silicon diaphragm assembly has a circular diaphragm portion and said covering member has a circular well.

8. A semiconductor pressure transducer assembly as claimed in claim 1, 3 or 4, wherein said covering member is made of borosilicate glass.

9. A semiconductor pressure transducer assembly as claimed in claim 1, 3 or 4, wherein said passivating layer is silicon dioxide and said conductive material of said conductive layer is polysilicon.

10. A semiconductor pressure transducer assembly as claimed in claim 1, 3 or 4, wherein said piezoresistive elements construct a piezoresistive bridge circuit.

3. A semiconductor pressure transducer assembly comprising:

a silicon diaphragm assembly having a thin pressure sensitive diaphragm portion and a thick supporting portion surrounding the pressure sensitive diaphragm portion;

piezoresistive elements constructed on the pressure sensitive portion of said silicon diaphragm assembly, the resistance values of the piezoresistive elements varying depending on the strain appearing in the diaphragm portion in response to pressure applied thereto;

conducting paths constructed on said silicon diaphragm assembly for electrically connecting of said piezoresistive elements;

a passivating layer of insulating material covering a surface of said silicon diaphragm assembly on which said piezoresistive elements and said conducting paths are constructed;

a layer of conductive material formed on a surface of said passivating layer; and

a covering member of insulating material mounted and bonded onto said silicon diaphragm assembly on contact with said conductive material layer on said passivating layer using Anodic Bonding method, wherein said passivating layer of insulating material is reformed on the surface of said silicon diaphragm assembly, on which said piezoresistive elements and said conducting paths are constructed, after removing a insulating material layer used as mask means in diffusion method for constructing said piezoresistive elements and said conducting paths.

4. A semiconductor pressure transducer assembly comprising:

a silicon diaphragm assembly having a thin pressure sensitive diaphragm and a thick supporting portion surrounding the pressure sensitive diaphragm portion;

piezoresistive elements constructed on the pressure sensitive diaphragm portion of said silicon diaphragm assembly, the resistance values of the piezoresistive elements varying depending on the strain appearing in the diaphragm portion in response to pressure applied thereto;

conducting paths constructed on said silicon diaphragm assembly for electrically connecting of said piezoresistive elements;

a passivating layer of insulating material covering a surface of said silicon diaphragm assembly on which said piezoresistive elements and said conducting paths are constructed;

a layer of conductive material formed on a surface of said passivating layer; and

a covering member of insulating material mounted and bonded onto said silicon diaphragm assembly in contact with said conductive material layer on said passivating layer using Anodic Bonding method, wherein said conductive material is formed on the surface of said passivating layer on the thick supporting portion of said silicon diaphragm assembly.

5. A semiconductor pressure transducer assembly as claimed in claim 4, wherein said conductive material is formed on the area of the surface of said passivating layer corresponding to the contacting surface of said covering member.