Solid electrochromic element
First Claim
1. A solid electrochromic element which comprises a dielectric material layer, an electron blocking layer, a solid electrochromic substance layer and a second electrode successively laminated on a first electrode and in which a voltage is applied between said first and said second electrode to thereby cause coloration of said solid electrochromic substance layer, the improvement residing in that said electron blocking layer is formed by at least two layers, of which the layer adjacent to the electrode to which a positive voltage is applied is formed by an N-type semiconductor and the layer adjacent to the electrode to which a negative voltage is applied is formed by a P-type semiconductor.
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Abstract
In a solid electrochromic element which comprises a lamination of a first electrode, a dielectric material layer, an electron blocking layer, a solid electrochromic substance layer and a second electrode and in which a voltage is applied between the first and the second electrode to thereby cause coloration of the solid electrochromic substance layer, the electron blocking layer is formed by two layers, of which the layer adjacent to the electrode to which a positive voltage is applied is formed by an N-type semiconductor and the layer adjacent to the electrode to which a negative voltage is applied formed by a P-type semiconductor.
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5 Claims
- 1. A solid electrochromic element which comprises a dielectric material layer, an electron blocking layer, a solid electrochromic substance layer and a second electrode successively laminated on a first electrode and in which a voltage is applied between said first and said second electrode to thereby cause coloration of said solid electrochromic substance layer, the improvement residing in that said electron blocking layer is formed by at least two layers, of which the layer adjacent to the electrode to which a positive voltage is applied is formed by an N-type semiconductor and the layer adjacent to the electrode to which a negative voltage is applied is formed by a P-type semiconductor.
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