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Method of making transducer

  • US 4,293,373 A
  • Filed: 02/26/1980
  • Issued: 10/06/1981
  • Est. Priority Date: 05/30/1978
  • Status: Expired due to Term
First Claim
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1. The method of making a silicon pressure transducer, said method comprising the steps of:

  • selectively boron doping both faces of a silicon wafer;

    etching one face of said wafer to define a cavity within a frame forming a closed loop and two lands spaced from each other and from said frame, said diaphragm connecting said lands; and

    selectively etching the other face of said wafer opposite said groove so as to define a silicon diaphragm to which both of said lands are fixed, said etching steps leaving at least two filaments having a first pair of adjacent ends fixed to one land and a second pair of adjacent ends fixed to the other land in a plane spaced from said diaphragm.

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