Plasma etching using improved electrode

• US 4,297,162 A
• Filed: 10/17/1979
• Issued: 10/27/1981
• Est. Priority Date: 10/17/1979
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Mundt, Randall S., Wooldridge, Timothy A., Blasingame, Thomas O.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/085,564
• Time in Patent Office: 741 Days
• Field of Search: 219/121 PA, 250/531, 250/539, 204/164, 204/192 EC, 204/192 E, 204/298, 156/345, 156/643, 156/646, 156/656, 156/657, 313/231.3, 313/348
• US Class Current: 438/729
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H05H 1/40 using applied magnetic fields, e.g. for focusing or rotating the arc cf. B23K9/08, B23K9/073
• CPC Class Codes: Y10S 422/906 Plasma or ion generation means

Abstract

Radio frequency plasma etching of conductive coatings on semiconductor slices is improved by the use of a curved electrode which is closer to the slice at the center than at the periphery. Preferably, the electrode is in a symmetrical chamber which contains only one slice, and reactant gases are admitted through apertures in the electrode. An r.f. power source is connected between the electrode and a holder for the slice.

Claims

1. A radio frequency plasma reactor electrode for treating a relatively flat workpiece surface comprising an electrode surface generally of the same size or greater in size than the workpiece surface, the electrode surface positioned facing said workpiece surface but spaced therefrom to provide a plasma zone, the electrode surface being convex shaped to include a protruding portion which is generally symmetrical about a central area of said workpiece surface and closer to said central area than to peripheral areas of said workpiece surface.

2. Apparatus according to claim 1 wherein the workpiece surface is a semiconductor slice having coatings thereon.

3. Apparatus according to claim 1 wherein said electrode surface is a section of a sphere.

4. Apparatus according to claim 3 wherein said electrode is generally circular in shape.

5. Apparatus according to claim 4 wherein the distance which the protruding portion extends toward said central area is about the same as the minimum spacing between the electrode and the workpiece surface.

6. Apparatus according to claim 5 wherein the workpiece surface is a generally round semiconductor slice having a coating thereon, and the plasma etches said coating.

7. A radio frequency plasma reactor for etching conductive coatings on semiconductor slices comprising a relatively flat conductive holder for receiving a semiconductor slice, a conductive electrode having a surface facing said holder, means for applying radio frequency voltage across the electrode and the holder to produce a plasma reaction in a space between the electrode and holder, the electrode including a central portion extending closer to the holder at about the center thereof than around the periphery thereof.

8. Apparatus according to claim 7 wherein the electrode has a curved curvex surface facing the holder.

9. Apparatus according to claim 8 wherein the curvex surface is approximately a section of a sphere.

10. Apparatus according to claim 9 wherein the conductive electrode and the holder are generally circular in shape.

11. Apparatus according to claim 10 wherein the electrode has a plurality of small apertures for inlet of reaction gases.

12. A method of etching a coating on a generally circular silicon slice comprising

(a) positioning the slice symmetrically in a chamber on a conductive holder,

(b) positioning an electrode facing the slice in the chamber, the electrode being of generally symmetrical shape with respect to the slice and having a central part closer to the slice than peripheral parts,

(c) admitting reaction gas to the chamber while vacuum-pumping the chamber,

(d) applying radio frequency voltage between the holder and the electrode.

13. A method according to claim 12 wherein said central part is shaped in a convex manner generally symmetrical with respect to the slice.

14. A method according to claim 13 wherein said reaction gas is admitted through ports in said electrode.