Deposition of ordered crystalline films

• US 4,297,189 A
• Filed: 06/27/1980
• Issued: 10/27/1981
• Est. Priority Date: 06/27/1980
• Status: Expired due to Term

• Current Assignee: Rockwell International Corporation
• Original Assignee: Rockwell International Corporation
• Inventors: Smith, Elroy C. Jr., Yao, Shi K.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/163,532
• Time in Patent Office: 487 Days
• Field of Search: 204/192 R, 204/192 C, 204/192 SP, 204/192 PE, 204/192 S, 204/298
• US Class Current: 204/192.18
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/34 Sputtering

Abstract

Deposition of ordered polycrystalline films of zinc oxide and other materials having a strongly preferred crystal growth direction and a high degree of symmetry about the preferred direction is achieved consistently by disposing a charged electrode in a sputtering chamber to limit bombardment of the film and underlying substrate by charged particles.

Claims

1. Apparatus for forming films of ordered polycrystalline material, comprising:

a cross-field radio frequency magnetron sputtering apparatus having a chamber adapted for the removal of material from a hollow cylindrical target cathode by ionic bombardment and for the deposition of said material on the surface of a selected object, wherein the elements for sputtering include said cathode and a central disk type anode, both mounted at the top of said chamber spaced apart from each other by a small distance;

a fixture for supporting said selected object spaced apart from said sputtering elements by a significant distance, said fixture having means for mounting said selected object disposed at an angle relative to said sputtering elements, wherein said angle is selected to cause the net flux of said material from said cathode to be received by said selected object substantially normal to its upper surface; and

means for deflecting charged particles away from said selected object, said deflecting means comprising an electrode disposed on said fixture in the vicinity of a mounting location for said selected object, wherein said electrode is electrically isolated from said sputtering elements; and

means for applying a fixed electric potential to said electrode.

2. The apparatus recited in claim 1, wherein said electrode is insulated from said fixture.

3. The apparatus recited in claim 2, wherein said means for applying a fixed electric potential holds said electrode at a positive potential.

4. The apparatus recited in claim 3, wherein said fixture is grounded to the interior of said chamber.

5. The apparatus recited in claim 3, wherein said fixture is electrically floating.

6. The apparatus recited in claim 3, wherein said positive potential is about fifteen volts.

7. The apparatus recited in claim 1, wherein said electrode comprises a ring.

8. The apparatus recited in claim 1, wherein said electrode comprises a grid.

9. The apparatus recited in claim 1, wherein said electrode comprises a screen.

10. The apparatus recited in claim 1, wherein said means for applying a fixed electric potential holds said electrode at a positive potential.

11. The apparatus recited in claim 10, wherein said fixture is held at the same potential as said electrode.

12. The apparatus recited in claim 10, wherein said positive potential is about fifteen volts.

13. A method of forming a film of ordered polycrystalline material on a selected object in a cross-field radio frequency magnetron sputtering chamber having sputtering elements in the ceiling thereof, said method comprising the steps of:

orienting a line normal to the deposition surface of said selected object at an angle of about sixty degrees away from the vertical; and

deflecting charged particles away from said selected object by means of a positively charged electrode disposed in the vicinity of said selected object and spaced a significant distance away from said sputtering elements, wherein said electrode is electrically isolated from said sputtering elements.

14. The method recited in claim 13, wherein said material has a strongly preferred crystal growth direction.

15. The method recited in claim 14, wherein said material has a high degree of symmetry about said preferred crystal growth direction.

16. The method recited in claim 15, wherein said material has a hexagonal crystal structure.

17. The method recited in claim 16, wherein said material is zinc oxide.

18. The method recited in claim 17, further comprising the step of depositing said film to a minimum thickness of about 2000 angstroms and to a minimum thickness of at least about 8000 angstroms when said selected object includes aluminum on the surface thereof.

19. The method recited in claim 18, further comprising the step of maintaining a partial pressure of oxygen in said chamber at about ten percent of the total pressure during sputtering and at about 200 microns during cooling.

20. The method recited in claim 19, further comprising the step of controlling the temperature of said selected object to lie in the range from 180 to 200 degrees centigrade during deposition.

21. The method recited in claim 20, further comprising the step of maintaining the deposition rate of said material relatively low at about 70 to 85 angstroms per minute.

22. The method recited in claim 21, further comprising the step of preheating the target cathode of said chamber prior to the time deposition is begun.

23. The method recited in claim 22, further comprising the step of sputter etching the surface of said selected object prior to the time deposition is begun.

24. The method recited in claim 23, further comprising the step of maintaining a mass flow rate of argon in said chamber of about twenty-five standard cubic centimeters per minute.

25. The method recited in claim 24, further comprising the step of maintaining a total gas pressure in said chamber at about 6.8 microns.

26. The method recited in claim 16;

wherein said material is zinc oxide, sapphire, or beryllium oxide.

27. The method recited in claim 16, wherein said material is a chalcogenide.

28. The method recited in claim 16, wherein said material is vanadium oxide, chromium oxide, gallium oxide, cesium oxide, mercury oxide, or titanium oxide.

29. The method recited in claim 15, wherein said material is barium oxide or palladium oxide.