Semiconductor ion emitter for mass spectrometry

• US 4,301,369 A
• Filed: 02/13/1979
• Issued: 11/17/1981
• Est. Priority Date: 08/12/1978
• Status: Expired due to Term

• Current Assignee: President of Osaka University
• Original Assignee: President of Osaka University
• Inventors: Matsuda, Hisashi, Matsuo, Takekiyo, Katakuse, Itsuo
• Primary Examiner(s): Lewis, Michael L.
• Application Number:
  US06/011,863
• Time in Patent Office: 1,008 Days
• Field of Search: 428/620, 428/611, 428/663, 428/665, 428/606, 428/607, 428/546, 428/664, 428/672, 313/309, 313/103 R, 313/230-232, 313/310, 313/328, 313/329, 313/345, 313/351, 313/500, 313/337, 250/423 R, 250/423 P, 250/423 F, 250/288
• US Class Current: 250/423.00R
• CPC Class Codes: H01J 49/16 using surface ionisation, e.g. field-, thermionic- or photo-emission
• CPC Class Codes: Y10T 428/12438 Composite
• CPC Class Codes: Y10T 428/12528 Semiconductor component
• CPC Class Codes: Y10T 428/12833 Alternative to or next to each other
• CPC Class Codes: Y10T 428/12889 Au-base component

Abstract

A semiconductor ion emitter for a mass spectrometer, comprises an electrode having semiconductor whiskers provided on the conductive surface of a base. A process for manufacturing such semiconductor ion emitter, includes steps of evaporating gold onto a wire having a diameter of about 60 μm, preheating the coated wire, and supplying a gas containing the semiconductor for growth of the whiskers on the gold plated wire. An apparatus for such process comprises a vacuum vessel for enclosing the wire, means for controllably heating the wire and means for controllably supplying a gas containing the semiconductor into the vacuum vessel.

Claims

1. Ion emitter for mass spectrometry comprising a wire having a diameter of approximately 60 μ

m and having a conductive metal peripheral surface, and a multiplicity of whiskers of semiconductor material projecting from said conductive metal peripheral surface of said wire.

2. Ion emitter according to claim 1, in which said whiskers have a length of approximately 20 μ

m and a diameter of approximately 0.2 μ

m.

3. Ion emitter according to claim 1, in which said peripheral surface of said wire comprises a gold layer.

4. Ion emitter according to any of claims 1 to 3, in which said wire is metal.

5. Ion emitter according to claim 4, in which the metal of said wire is selected from the group consisting of tungsten and tantalum.

6. Ion emitter according to claim 3, in which said wire is of semiconductor material coated with said gold layer.

7. Ion emitter according to claim 6, in which said semiconductor material of said wire is selected from the group consisting of silicon and germanium.

8. Ion emitter according to claim 3, in which said wire is of insulating material coated with said gold layer.

9. Ion emitter according to claim 8, in which said insulating material of said wire is selected from the group consisting of glass and synthetic resin.

10. Ion emitter according to claim 1 or 2, in which said wire is welded to the tips of two other wires of larger diameter serving as a support and electrical connectors.