Method of fabricating semiconductor junction device employing separate metallization

• US 4,301,592 A
• Filed: 01/21/1980
• Issued: 11/24/1981
• Est. Priority Date: 05/26/1978
• Status: Expired due to Term

• Current Assignee: Hung Chang Lin
• Original Assignee: Hung Chang Lin
• Inventors: Lin, Hung Chang
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/113,574
• Time in Patent Office: 673 Days
• Field of Search: 29/572, 29/590, 136/256, 136/261, 357/30, 357/65, 427/88-90
• US Class Current: 438/98
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10S 148/018 Compensation doping
• CPC Class Codes: Y10S 148/02 Contacts, special

Abstract

A method of fabricating a p-n junction device such as solar cells using metal contacts for p regions and n region heat-treated at two different temperatures. A metal with low work functions is heated first to a high temeperature for making ohmic contact to a p-type semiconductor substrate, and then at low temperature for contacting the n-type region. A metal with high work function is heated first to a high temperature for contacting an n-type semiconductor substrate and then at low temperature for contacting the p-type region.

Claims

1. A method of contacting a semiconductor junction device comprising the steps of forming a pn or an np junction on a doped semiconductor substrate of one conductivity type by creating a thin layer of opposite conductivity type on said substrate, depositing a layer of a metal on said substrate, heating said substrate and said metal at first temperature to form an ohmic contact, depositing a layer of the same metal on said thin layer of opposite conductivity type, heating said substrate and said metal to a second temperature which is lower than said first temperature, said second temperature being sufficient to form an ohmic contact between said metal and said thin layer but insufficient to form an ohmic contact between said metal and said substrate.

2. A method of contacting a semiconductor junction device as defined in claim 1, wherein said substrate is n-type and said metal is of higher work function than said substrate.

3. A method of contacting a semiconductor junction device as defined in claim 2, wherein said metal is aluminum.

4. A method of contacting a semiconductor junction device as defined in claim 3, wherein said first temperature is higher than 400 degrees centigrade and said second temperature is less than 400 degrees centigrade.

5. A method of contacting a semiconductor junction device as defined in claim 1, wherein said substrate is p-type and said metal is of lower work function than said substrate.