Masking agent for the deposition of a material and method for such a deposition using this masking agent

• US 4,307,181 A
• Filed: 03/19/1980
• Issued: 12/22/1981
• Est. Priority Date: 03/26/1979
• Status: Expired due to Term

• Current Assignee: Ebauches SA (The Swatch Group AG)
• Original Assignee: Ebauches SA (The Swatch Group AG)
• Inventors: Ruedin, Yves, Ganguillet, Claude, Cognard, Jacques
• Primary Examiner(s): MARTIN, ROLAND E
• Application Number:
  US06/131,710
• Time in Patent Office: 643 Days
• Field of Search: 430/315, 430/324, 430/198, 430/270, 430/329, 427/91
• US Class Current: 430/315
• CPC Class Codes: G03F 7/004 Photosensitive materials G03F7/12, G03F7/14 take precedence
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: H05K 3/0076 characterised by the composition of the mask
• CPC Class Codes: H05K 3/143 Masks therefor H05K3/048 takes precedence

Abstract

To prepare a masking agent resistant to temperature, one adds silica powder to a photoresist. The mixture thus obtained is used to produce selective deposition of a layer of material on a substrate. The mixture of photoresist and silica powder serves as a photo-sensitive protective material which is then eliminated partially by selective exposure to light and use of a photographic developer. The temperatures involved in the deposition of the layer of desired material, for instance tin oxide, are about 500° C. (deposition in the vapor phase), and the photo-sensitive material would be liable to destruction if it did not contain silica powder. It is then necessary, once the deposition of the desired material has been effected, to increase the temperature of the workpiece up to about 540° C. to destroy and, hence, to eliminate the protective material.

Claims

1. A method for depositing a layer of a material on at least one area of the surface of a substrate, said method comprising the steps of:

providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer,

depositing a layer of said material over said surface including said at least one area, said deposition being provided at a temperature of at least 300°

C.,

heating said substrate to a temperature corresponding to the complete destruction of the photoresist mixed with said silica particles,

cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.

4. A method according to anyone of the claims 1, 2 or 3, wherein said material is deposited in vapor phase.

6. A method according to claim 1, wherein the heating of the substrate is performed at a temperature of about 540°

C.

7. A method according to anyone of the claims 1, 5 or 3, wherein said material is tin oxide.

8. A method as claimed in claims 1, 2 or 3 in which said particles have a diameter of less than one micron.

9. The method as claimed in claims 1, 2 or 3 in which the silica powder represents 1 to 2% of the weight of the mixture.

2. A method for depositing a layer of a material on at least one area of the surface of a substrate said deposition being provided at a temperature of at least 300°

C., said method comprising the steps of;

providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer;

depositing a layer of said material over said surface including said at least one area at a temperature which is sufficient to finally produce the complete destruction of the photoresist mixed with said silica particles, and

cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.

5. A method according to anyone of the claims 2 or 3, wherein said material is deposited in vapor phase at a temperature higher than 500°

C.

3. A method of depositing a layer of a material on at least one area of the surface of a substrate said deposition being performed at a temperature of at least 300°

C., said temperature corresponding to the beginning of the softening of said substrate, said method comprising the steps of;

depositing a layer of silica over the whole surface of said substrate,

providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer,

depositing a layer of said material over said surface including said at least one area at a temperature which is sufficient to finally produce the complete destruction of the photoresist mixed with said silica particles, and

cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.