Detecting circuit for a power source voltage

• US 4,309,627 A
• Filed: 03/27/1979
• Issued: 01/05/1982
• Est. Priority Date: 04/14/1978
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Daini Seikosha
• Original Assignee: Kabushiki Kaisha Daini Seikosha
• Inventors: Tabata, Junichi
• Primary Examiner(s): Anagnos, Larry N.
• Application Number:
  US06/024,441
• Time in Patent Office: 1,015 Days
• Field of Search: 307/362, 307/304, 307/297, 340/636, 340/663, 368/10, 368/66
• US Class Current: 327/81
• CPC Class Codes: G01R 19/16542 for batteries charge condition monitoring in G01R31/36
• CPC Class Codes: G04C 10/04 with means for indicating the condition of the power supply in general G01R31/36

Abstract

A detecting circuit for a power source voltage comprises a reference voltage generating circuit for generating a reference voltage, a voltage dividing circuit for dividing the power source voltage, and a voltage comparing circuit having one input terminal connected to receive the reference voltage from the reference voltage generating circuit and another input terminal connected to receive the divided voltage from the voltage dividing circuit. In one embodiment, the reference voltage generating circuit comprises at least two MOS-transistors having different threshold voltages and having the same polarity, one of the MOS-transistors having its gate and drain connected together with the drain being connected to the gate of the other MOS-transistor, the drain and source of the other MOS-transistor each being connected to a resistor, and the drain of the other MOS-transistor being connected to one input terminal of the voltage comparing circuit. In another embodiment, the reference voltage generating circuit comprises a P-channel MOS-transistor having its drain connected to the drain of the N-channel MOS-transistor and the gates of the P-channel and N-channel MOS-transistors being connected to the drains thereof respectively, one of the MOS-transistors being connected to one terminal of the power source, and the other of the MOS-transistors being connected to one input terminal of the voltage comparing circuit.

Claims

1. In a detecting circuit for a power source voltage:

a reference voltage generating circuit for generating a reference voltage;

a voltage dividing circuit for dividing the power source voltage; and

a voltage comparing circuit having one input terminal connected to receive the reference voltage from said reference voltage generating circuit and another input terminal connected to receive the divided voltage from said voltage dividing circuit;

wherein said reference voltage generating circuit comprises at least two MOS-transistors having different threshold voltages and having the same polarity, one of said MOS-transistors having the gate thereof connected to the drain thereof and said drain being connected to the gate of the other MOS-transistor, the drain and source of said other MOS-transistor each being connected to a resistor, and the drain of said other MOS-transistor being connected to the one input terminal of said voltage comparing circuit, whereby the difference between the threshold voltages of said MOS-transistors is proportional to the reference voltage.

2. A detecting circuit according to claim 1 wherein said voltage dividing circuit comprises at least two connected together resistors with the connection point between the two resistors being connected to said another input terminal of said voltage comparing circuit.

3. In a detecting circuit for a power source voltage:

a reference voltage generating circuit for generating a reference voltage;

a voltage dividing circuit for dividing the power source voltage; and

a voltage comparing circuit having one input terminal connected to receive the reference voltage from said reference voltage generating circuit and another input terminal connected to receive the divided voltage from said voltage dividing circuit;

wherein said reference voltage generating circuit comprises a P-channel MOS-transistor having the drain thereof connected to the drain of said N-channel MOS-transistor and the gates of said P-channel and N-channel MOS-transistors being connected to the drains thereof respectively, one of the MOS-transistors being connected to one terminal of said power source, and the other of the MOS-transistors being connected to the one input terminal of said voltage comparing circuit.

4. A detecting circuit according to claim 3 wherein said voltage dividing circuit comprises at least two connected together resistors with the connection point between the two resistors being connected to said another input terminal of said voltage comparing circuit.