Pressure sensor

• US 4,314,226 A
• Filed: 01/04/1980
• Issued: 02/02/1982
• Est. Priority Date: 02/02/1979
• Status: Expired due to Term

• Current Assignee: Nissan Motor Co., Ltd.
• Original Assignee: Nissan Motor Co., Ltd.
• Inventors: Mihara, Teruyoshi, Tominaga, Tamotsu, Takeuchi, Masami, Oguro, Takeshi
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US06/109,489
• Time in Patent Office: 760 Days
• Field of Search: 338/2, 338/4, 338/36, 338/42, 357/26, 357/48, 73/720, 73/721, 73/726, 73/727
• US Class Current: 338/4
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

A pressure sensor having a silicon diaphragm whose opposite surfaces are subjected to fluid pressures for measurement. The diaphragm includes a diffused resistor as a pressure-sensitive element on a silicon base, a protective layer composed of a silicon epitaxial layer opposite in conductive type to the resistor and formed on the diffused resistor in order to prevent the resistor from being exposed to a corresponding fluid pressure, and an electrically insulating layer formed on an outer surface of the protective layer.

Claims

1. A pressure sensor comprising:

a package having a hollow interior space and an inlet for introducing into the hollow interior space a fluid pressure to be measured;

a silicon diaphragm block confined within and bonded to the interior space of said package, said diaphragm block including a diaphragm spaced from the inside of said package;

said diaphragm including a base layer, said base layer including a pressure-sensitive element comprising a diffused resistor on a surface thereof, and a protective layer opposite in conductive type to said resistor and covering said diffused resistor;

a plurality of aluminum electrodes extending through said protective layer;

an internal diffused layer being of the same conductive type as said diffused resistor and disposed substantially between said base and said protective layer, said internal diffused layer electrically connecting said aluminum electrodes and said diffused resistor; and

diffused areas in said protective layer surrounding said aluminum electrodes, said diffused areas being opposite in conductive type to said protective layer and formed by diffusing said aluminum electrodes by a heat treatment into said protective layer.

2. A pressure sensor according to claim 1, wherein said protective layer is of substantially the same linear coefficient of thermal expansion as said base layer.

3. A pressure sensor according to claim 2, wherein said protective layer is composed of a silicon epitaxial layer.

4. A pressure sensor according to claim 1, 9, or 10 wherein said diaphragm further includes an electrically insulating layer on said protective layer and wherein said aluminum electrodes extend through said insulating layer and further extend along an outer surface of said insulating layer.

5. A pressure sensor according to claim 4, wherein said diaphragm comprises an N type silicon base layer, an N type silicon epitaxial protective layer, a P⁺ type internal diffused layer and P type diffused areas.