Semiconductor laser device

• US 4,315,226 A
• Filed: 09/20/1979
• Issued: 02/09/1982
• Est. Priority Date: 09/20/1978
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Chinone, Naoki, Ito, Ryoichi, Saito, Kazutoshi, Shige, Noriyuki
• Primary Examiner(s): Davie, James W.
• Application Number:
  US06/077,735
• Time in Patent Office: 873 Days
• Field of Search: 331/94.5 H, 357/16-18
• US Class Current: 372/45.01
• CPC Class Codes: H01S 5/20 Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/2275 mesa created by etching
• CPC Class Codes: H01S 5/32 comprising PN junctions, e.g. hetero- or double- heterostructures H01S5/34, H01S5/36 take precedence

Abstract

A semiconductor laser device is capable of producing an increased optical output power with improved optical characteristics without being subjected to mode distortions in the output beam, while retaining advantageous features inherent to a semiconductor laser device of a buried heterostructure. The semiconductor laser device comprises an optical confinement region which is constituted by at least first, second, third and fourth semiconductor layers successively laminated on a predetemined semiconductor substrate. The second semiconductor layer has a relatively small refractive index and a relatively wide band gap as compared with those of the third semiconductor layer, while the first and the fourth semiconductor layers which are of the conductivity types opposite to each other have relatively small refractive indexes as compared with the second and the third semiconductor layers. The band gaps of the fourth and the second semiconductor layers are relatively large as compared with that of the third semiconductor layer. Difference in the band gap at least between the second and the third semiconductor layers is not smaller than 0.15 eV.

Claims

1. In a semiconductor laser device, an optical confinement region constituted by at least first, second, third and fourth semiconductor layers successively laminated on a predetermined semiconductor substrate, and a fifth semiconductor layer burying at least said second, third, and fourth semiconductor layers at each side face thereof which extends in parallel to the propagating direction of the laser ray, said second semiconductor layer having a relatively small refractive index as compared with that of said third semiconductor layer, said first and fourth semiconductor layers being of conductivity types opposite to each other and having relatively small refractive indexes as compared with that of said second and third semiconductor layers, said fourth and second semiconductor layers having respective band gaps which are relatively large as compared with that of said third semiconductor layer, and the fifth semiconductor layer having a smaller refractive index and a larger band gap than at least those of said third semiconductor layer, wherein difference in the band gap at least between said second semiconductor layer and said third semiconductor layer is selected not smaller than 0.15 eV.

2. In a semiconductor laser device according to claim 1, wherein said fifth semiconductor layer also buries said first semiconductor layer at side faces thereof extending in parallel to the propagating direction of laser ray.

3. In a semiconductor laser device according to claim 1, wherein said first semiconductor layer is formed of Ga_1-x Al_x As where 0.2≦

x≦

0.6, said second semiconductor layer is formed of Ga_1-y Al_y As where 0.1≦

y≦

0.5, said third semiconductor layer is formed of Ga_1-ω

Al.sub.ω

As where 0≦

ω

≦

0.3, and said fourth semiconductor layer is formed of Ga_1-v Al_v As where 0.2≦

v≦

0.6.

4. In a semiconductor laser device according to claim 1, wherein said first semiconductor layer is formed of Ga_1-x Al_x As where 0.2≦

x≦

0.6, said second semiconductor layer is formed of Ga_1-y Al_y As where 0.1≦

y≦

0.5, said third semiconductor layer is formed of Ga_1-ω

Al.sub.ω

As where 0≦

ω

≦

0.3, said fourth semiconductor layer is formed of Ga_1-v Al_v As where 0.2≦

v≦

0.6, and said fifth semiconductor layer is formed of Ga_1-u Al_u As where 0.1≦

u≦

0.6.

5. In a semiconductor laser device according to claim 3 or 4, wherein a semiconductor layer assembly constituted by said first, second, third and fourth semiconductor layers has a stripe width of 1 μ

m to 5 μ

m, said third semiconductor layer has a thickness of 0.02 μ

m to 0.2 μ

m, difference in the AlAs mole fraction between said third semiconductor layer and said fifth semiconductor layer burying said semiconductor layer assembly at both side thereof is in a range of 0.25 to 0.35, and difference in AlAs mole fraction between said third semiconductor layer and said second semiconductor layer is not smaller than 0.2.

6. In a semiconductor laser device according to any one of claims 1, 2, 3 and 4, wherein a sixth semiconductor layer is interposed between said second semiconductor layer and said third semiconductor layer, the band gap of said sixth semiconductor layer being larger than those of said second and third semiconductor layers, and difference in band gap between said third semiconductor layer and said sixth semiconductor layer is not smaller than 0.15 eV.

7. In a semiconductor laser device according to claim 6, wherein said sixth semiconductor layer has a thickness not greater than 0.3 μ

m.

8. In a semiconductor laser device according to claim 1, wherein the difference in the band gap at least between said second semiconductor layer and said third semiconductor layer is not smaller than 0.25 eV.

9. In a semiconductor laser device according to claim 6, wherein the refractive index of said sixth semiconductor layer is relatively small as compared with the refractive index of said second semiconductor layer.

10. In a semiconductor laser device according to claim 3 or 4, wherein x>

y.

11. In a semiconductor laser device according to claim 10, wherein v>

w.

12. In a semiconductor laser device according to claim 11, wherein v>

y.

13. In a semiconductor laser device according to claim 1, 2, 3, 4, or 8, wherein said second semiconductor layer has a thickness of 0.4 μ

m-2.0 μ

m.

14. In a semiconductor laser device according to claim 5, wherein said second semiconductor layer has a thickness of 0.4 μ

m-2.0 μ

m.

15. In a semiconductor laser device according to claim 6, wherein said second semiconductor layer has a thickness of 0.4 μ

m-2.0 μ

m.