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Semiconductor laser device

  • US 4,315,226 A
  • Filed: 09/20/1979
  • Issued: 02/09/1982
  • Est. Priority Date: 09/20/1978
  • Status: Expired due to Term
First Claim
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1. In a semiconductor laser device, an optical confinement region constituted by at least first, second, third and fourth semiconductor layers successively laminated on a predetermined semiconductor substrate, and a fifth semiconductor layer burying at least said second, third, and fourth semiconductor layers at each side face thereof which extends in parallel to the propagating direction of the laser ray, said second semiconductor layer having a relatively small refractive index as compared with that of said third semiconductor layer, said first and fourth semiconductor layers being of conductivity types opposite to each other and having relatively small refractive indexes as compared with that of said second and third semiconductor layers, said fourth and second semiconductor layers having respective band gaps which are relatively large as compared with that of said third semiconductor layer, and the fifth semiconductor layer having a smaller refractive index and a larger band gap than at least those of said third semiconductor layer, wherein difference in the band gap at least between said second semiconductor layer and said third semiconductor layer is selected not smaller than 0.15 eV.

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