Circuit for switching and transmitting alternating voltages
First Claim
1. In a circuit for switching and transmitting alternating voltages having an MOS transistor provided with a gate and further provided with source and drain regions surrounded by pn-junctions, biassing means connected to bias both junctions in their blocking direction in the driven condition of the transistor, and circuit means connected for substantially synchronising the gate voltage changes, in the driven condition of the transistor, with the alternating voltage to be transmitted, the improvement wherein said circuit means comprise a capacitance connected between the transmission path of said MOS transistor and said gate for causing the instantaneous potential difference between the gate voltage and the alternating voltage to be transmitted to correspond to the switching voltage which is required in order to drive said transistor.
2 Assignments
0 Petitions
Accused Products
Abstract
A circuit for switching and transmitting alternating voltages comprise an MOS transistor, the pn-junctions which surround the source and drain regions being biased in a blocking direction in the driven condition of the transistor, correspondence between the potential difference between gate and alternating voltages and the required drive voltage of the transistor being achieved by a circuit which largely synchronizes gate voltage changes with the alternating voltage to be transmitted.
-
Citations
8 Claims
- 1. In a circuit for switching and transmitting alternating voltages having an MOS transistor provided with a gate and further provided with source and drain regions surrounded by pn-junctions, biassing means connected to bias both junctions in their blocking direction in the driven condition of the transistor, and circuit means connected for substantially synchronising the gate voltage changes, in the driven condition of the transistor, with the alternating voltage to be transmitted, the improvement wherein said circuit means comprise a capacitance connected between the transmission path of said MOS transistor and said gate for causing the instantaneous potential difference between the gate voltage and the alternating voltage to be transmitted to correspond to the switching voltage which is required in order to drive said transistor.
Specification