Optical repeater integrated lasers

• US 4,316,156 A
• Filed: 07/12/1979
• Issued: 02/16/1982
• Est. Priority Date: 07/12/1979
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Burnham, Robert D., Scifres, Donald R., Streifer, William
• Primary Examiner(s): Davie, James W.
• Application Number:
  US06/056,765
• Time in Patent Office: 950 Days
• Field of Search: 331/94.5 H, 357/17-19, 357/37, 357/38
• US Class Current: 372/50.1
• CPC Class Codes: G02F 3/00 Optical logic elements; Optical bistable devices
• CPC Class Codes: H01L 31/153 formed in, or on, a common substrate
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions
• CPC Class Codes: H01S 5/06243 controlling the position or direction of the emitted beam
• CPC Class Codes: H04B 10/2914 using lumped semiconductor optical amplifiers [SOA]

Abstract

Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Claims

1. In a plural layer semiconductor diode laser which is electrically biased to the point wherein light input causes the laser to commence lasing such that the improvement is characterized by:

a first substrate layer (1) of a semiconductive crystal,

a second layer (2) of a semiconductive crystal with a predetermined bandgap,

a third layer (3) of a semiconductive crystal with a bandgap relatively smaller than that of said second layer,

a fourth layer (4) of a semiconductive crystal with a bandgap similar to that of said second layer,

a fifth layer (5) of a semiconductive crystal with a bandgap between that of said second layer and said third layer,

a sixth layer (6) of a semiconductive crystal with a bandgap similar to that of said second layer,

wherein when said electrical bias (V) is slightly less than the breakdown voltage of the back biased junction between the fourth and fifth layers thereof, and external light (8,

     9) is supplied to the fourth or fifth layers, said back biased junction between said fourth and fifth layers becomes forward biased so as to stimulate the emission of laser light from the third layer.

2. The diode laser as set forth in claim 1 wherein said first layer (1) is n-type GaAs, said second layer (2) is n-type Ga₀.7 Al₀.3 As, said third layer (3) is n-type GaAs, said fourth layer (4) is p-type Ga₀.7 Al₀.3 As, said fifth layer (5) is n-type Ga₀.9 Al₀.1 As, and said sixth layer (6) is p-type Ga₀.7 Al₀.3 As.

3. The diode laser as set forth in claim 1 or 2 and further including

a constant voltage bias supply (V),

a capacitor (8) in parallel to and connected to said bias supply (V) and said diode laser (10), wherein at the impingement of said external light source (8, 9), said diode laser will emit a pulse of light the duration of which can be expressed by the relationship ##EQU2## where T₁ is the duration of said light pulse,

R_s is the series resistance (11) of laser (10), R_si, plus the external resistance of that branch R_ss,

C is the value of the external capacitor (8),

I_th is the threshold lasing current,

V is the value of the applied voltage.

4. The diode laser as set forth in claim 1 wherein said first and second layers comprise n-type Ga₀.7 Al₀.3 As, said third layer (32) is n-type GaAs, said fourth layer (33) is p-type Ga₀.7 Al₀.3 As, said fifth layer (34) is n-type GaAs, and said sixth layer (35) is p-type Ga₀.7 Al₀.3 As, said light being emitted by said third layer.

5. The diode laser as set forth in claim 1 wherein said first, second and third layers comprise n-type Ga₀.7 al₀.3 As, said fourth layer (42) is p-type GaAs, said fifth layer (43), is n-type GaAs, and said sixth layer (44), is p-type Ga₀.7 Al₀.3 As, said light being emitted by said fourth layer.