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Semiconductor diode laser array

  • US 4,318,058 A
  • Filed: 04/22/1980
  • Issued: 03/02/1982
  • Est. Priority Date: 04/24/1979
  • Status: Expired due to Term
First Claim
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1. A monolithically integrated laser array capable of providing light rays of a plurality of wavelengths, said array comprising a semiconductor body having:

  • a semiconductor substrate;

    a multi-layer structure formed on said substrate,said multi-layer structure comprising an active layer, a first cladding layer, and a second cladding layer separated from said first cladding laser by said active layer,said active layer being composed of a mixed crystal, the energy band gap of said active layer varying in a predetermined first direction of a plane lying in said active layer;

    means for electrically isolating regions of said multi-layer structure in parallel to a second directon perpendicular to said predetermined first direction and for providing a plurality of laser diodes;

    optical resonator means composed of two cleaved faces obtained by cleaving said semiconductor body perpendicularly to the direction of the optical axes of said laser diodes;

    said isolating means extending into said first cladding layer through said active and said second cladding layers; and

    means for supplying a voltage to forward bias each of said laser diodes.

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