Semiconductor diode laser array
First Claim
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1. A monolithically integrated laser array capable of providing light rays of a plurality of wavelengths, said array comprising a semiconductor body having:
- a semiconductor substrate;
a multi-layer structure formed on said substrate,said multi-layer structure comprising an active layer, a first cladding layer, and a second cladding layer separated from said first cladding laser by said active layer,said active layer being composed of a mixed crystal, the energy band gap of said active layer varying in a predetermined first direction of a plane lying in said active layer;
means for electrically isolating regions of said multi-layer structure in parallel to a second directon perpendicular to said predetermined first direction and for providing a plurality of laser diodes;
optical resonator means composed of two cleaved faces obtained by cleaving said semiconductor body perpendicularly to the direction of the optical axes of said laser diodes;
said isolating means extending into said first cladding layer through said active and said second cladding layers; and
means for supplying a voltage to forward bias each of said laser diodes.
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Abstract
An integrated laser array is disclosed in which a plurality of semiconductor lasers are integrated on a semiconductor multi-layer crystal that includes an active layer in which the band gap energy varies in one direction. By means of this arrangement a plurality of semiconductor lasers, which differ in their respective oscillating wavelengths over a relatively broad range, can be formed on a common substrate.
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Citations
7 Claims
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1. A monolithically integrated laser array capable of providing light rays of a plurality of wavelengths, said array comprising a semiconductor body having:
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a semiconductor substrate; a multi-layer structure formed on said substrate, said multi-layer structure comprising an active layer, a first cladding layer, and a second cladding layer separated from said first cladding laser by said active layer, said active layer being composed of a mixed crystal, the energy band gap of said active layer varying in a predetermined first direction of a plane lying in said active layer; means for electrically isolating regions of said multi-layer structure in parallel to a second directon perpendicular to said predetermined first direction and for providing a plurality of laser diodes; optical resonator means composed of two cleaved faces obtained by cleaving said semiconductor body perpendicularly to the direction of the optical axes of said laser diodes; said isolating means extending into said first cladding layer through said active and said second cladding layers; and means for supplying a voltage to forward bias each of said laser diodes. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification