Semiconductor diode laser array

• US 4,318,058 A
• Filed: 04/22/1980
• Issued: 03/02/1982
• Est. Priority Date: 04/24/1979
• Status: Expired due to Term

• Current Assignee: Nippon Electric Company Limited (NEC Corporation)
• Original Assignee: Nippon Electric Company Limited (NEC Corporation)
• Inventors: Kobayashi, Kohroh, Matsushita, Shigeo, Mito, Ikuo
• Primary Examiner(s): Davie, James W.
• Application Number:
  US06/142,743
• Time in Patent Office: 679 Days
• Field of Search: 331/94.5 H, 357/17, 357/18, 357/90, 350/96.11
• US Class Current: 372/50.12
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/1028 Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/125 Distributed Bragg reflector [DBR] lasers
• CPC Class Codes: H01S 5/4025 Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence
• CPC Class Codes: H01S 5/4031 Edge-emitting structures
• CPC Class Codes: H01S 5/4056 emitting light in more than one direction
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

An integrated laser array is disclosed in which a plurality of semiconductor lasers are integrated on a semiconductor multi-layer crystal that includes an active layer in which the band gap energy varies in one direction. By means of this arrangement a plurality of semiconductor lasers, which differ in their respective oscillating wavelengths over a relatively broad range, can be formed on a common substrate.

Claims

1. A monolithically integrated laser array capable of providing light rays of a plurality of wavelengths, said array comprising a semiconductor body having:

a semiconductor substrate;

a multi-layer structure formed on said substrate,

said multi-layer structure comprising an active layer, a first cladding layer, and a second cladding layer separated from said first cladding laser by said active layer,

said active layer being composed of a mixed crystal, the energy band gap of said active layer varying in a predetermined first direction of a plane lying in said active layer;

means for electrically isolating regions of said multi-layer structure in parallel to a second directon perpendicular to said predetermined first direction and for providing a plurality of laser diodes;

optical resonator means composed of two cleaved faces obtained by cleaving said semiconductor body perpendicularly to the direction of the optical axes of said laser diodes;

said isolating means extending into said first cladding layer through said active and said second cladding layers; and

means for supplying a voltage to forward bias each of said laser diodes.

2. The monolithically integrated laser array as claimed in claim 1, wherein one of said first and second cladding layers includes periodic structures having a prescribed pitch of thickness in the direction of said optical axis of each of said individual laser diodes,

said prescribed pitch decreasing with the increase in energy band gap of said active layer.

3. The monolithically integrated laser array as claimed in claim 2, wherein said periodic structures constitute Bragg reflectors provided in the parts where both ends of said individual laser diodes have been etched to a depth reaching said second cladding layer.

4. The monolithically integrated laser array as claimed in claim 3, further comprising a cleaved face obtained by cleaving one end of said semiconductor body in a perpendicular direction to each of the optical axes of said laser diodes, said Bragg reflectors consisting of said periodic structure provided in prescribed positions relative to said cleaved face.

5. The monolithically integrated laser array, as claimed in claim 4, further comprising light waveguides connected to said periodic structures and a combined light waveguide unifying said separate light waveguides.

6. The monolithically integrated laser array as claimed in claim 5, wherein said combined light waveguide is formed in a region including an active layer whose energy band gap is greater than the other regions.

7. The monolithically integrated laser array as claimed in claim 1, further including light waveguides arranged at a prescribed distance from said first and second cleaved faces and in a perpendicular direction to each of said optical axes;

third and fourth cleaved faces on both ends of said light waveguides obtained by cleaving said semiconductor body in a perpendicular direction to said first and second cleaved faces;

reflective means provided on said fourth cleaved face; and

periodic structures having a prescribed pitch of film thickness provided in one of said first and second cladding layers at the junctions of said optical axes, the axes of said light waveguides being at an inclination of 45°

to said optical axes.